SCHEMBL2103612

SCHEMBL2103612

CCN(CC)C(N(CC)CC)C(C)(C)[SiH2]c1ccccc1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ADRA2B P18089 2/20 0.40
HRH1 P35367 2/20 0.40
KCNH2 Q12809 2/20 0.40
PGR P06401 1/20 0.40
ADRA2A P08913 1/20 0.40
HTR2A P28223 1/20 0.40
KCNA5 P22460 2/20 0.34
SIGMAR1 Q99720 1/20 0.33
ALDH1A1 P00352 1/20 0.32
HPGD P15428 1/20 0.32
KDM4E B2RXH2 1/20 0.32
RIPK1 Q13546 2/20 0.32
CYP2D6 P10635 1/20 0.30
KCNE1 P15382 1/20 0.30
AOC3 Q16853 1/20 0.30
BCHE P06276 1/20 0.30
CACNA1F O60840 1/20 0.30
CHRM2 P08172 1/20 0.30
CHRM1 P11229 1/20 0.30
CHRM3 P20309 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2101441 0.91 HTR2A (0.37) ADRA2BHRH1KCNH2PGRADRA2A
SCHEMBL2102750 0.82 PGR (0.34) ADRA2BHRH1KCNH2PGRADRA2A
SCHEMBL2102109 0.79 HTR2A (0.32) HRH1HTR2AALDH1A1KDM4ERIPK1
SCHEMBL2103176 0.70 SIGMAR1 (0.39) ADRA2BHRH1KCNH2ADRA2ASIGMAR1
SCHEMBL2103073 0.70 TSHR (0.33) RIPK1
SCHEMBL2102164 0.69 SIGMAR1 (0.35) HRH1HTR2ASIGMAR1AOC3
SCHEMBL2102651 0.68 ADRA2A (0.40) ADRA2BHRH1KCNH2PGRADRA2A
SCHEMBL5922030 0.68 ADRA2A (0.44) ADRA2BHRH1KCNH2PGRADRA2A
SCHEMBL2269750 0.68 MEN1 (0.37) KCNH2ADRA2ASIGMAR1ALDH1A1KDM4E
SCHEMBL2101734 0.68 MEN1 (0.33) HRH1HTR2AAOC3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed