Predicted protein targets (top 6)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 1/20 | 0.33 |
| ▸ | RIPK1 | Q13546 | 2/20 | 0.32 |
| ▸ | HSP90AA1 | P07900 | 1/20 | 0.32 |
| ▸ | MAPT | P10636 | 1/20 | 0.32 |
| ▸ | GPR55 | Q9Y2T6 | 1/20 | 0.32 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2101734 | 0.79 | MEN1 (0.33) | — | |
| SCHEMBL2102686 | 0.79 | HSP90AA1 (0.32) | HSP90AA1MAPTGPR55 | |
| SCHEMBL2100788 | 0.75 | SIGMAR1 (0.37) | RIPK1MAPT | |
| SCHEMBL2102750 | 0.75 | PGR (0.34) | RIPK1 | |
| SCHEMBL2102109 | 0.74 | HTR2A (0.32) | RIPK1 | |
| SCHEMBL2101130 | 0.74 | HTR2A (0.32) | TSHRRIPK1 | |
| SCHEMBL1254751 | 0.72 | MAPK1 (0.36) | TSHRMAPTMAPK1 | |
| Ethane SCHEMBL8430515 | 0.70 | MAPK1 (0.35) | TSHRMAPTMAPK1 | |
| SCHEMBL2103612 | 0.70 | ADRA2B (0.40) | RIPK1 | |
| SCHEMBL2103176 | 0.70 | SIGMAR1 (0.39) | RIPK1GPR55 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8404584-B2 | Method of manufacturing semiconductor device | FUJITSU LIMITED (JP) | 2013-03-26 | — | — | US | disclosed |
| US-8164166-B2 | Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device | FUJITSU LIMITED (JP) | 2012-04-24 | — | — | US | disclosed |
| US-20110207319-A1 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2011-08-25 | — | — | US | disclosed |
| US-20090085170-A1 | INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2009-04-02 | — | — | US | disclosed |