SCHEMBL2102244

SCHEMBL2102244

CCNCC[SiH](Cl)c1ccccc1

nearest known ligand 0.39

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
HTT P42858 1/20 0.39
ADRB2 P07550 1/20 0.37
HTR1B P28222 2/20 0.33
HTR2A P28223 2/20 0.33
PRMT6 Q96LA8 1/20 0.33
KCNN4 O15554 1/20 0.31
SIGMAR1 Q99720 1/20 0.31
MEN1 O00255 2/20 0.30
KMT2A Q03164 2/20 0.30
TDP1 Q9NUW8 1/20 0.30
HTR1A P08908 1/20 0.30
HTR1D P28221 1/20 0.30
HTR1E P28566 1/20 0.30
HTR7 P34969 1/20 0.30
HTR2B P41595 1/20 0.30
HTR5A P47898 1/20 0.30
GLA P06280 1/20 0.30
CYP2C19 P33261 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2266973 0.87 CYP2C19 (0.39) HTTADRB2SIGMAR1MEN1KMT2A
SCHEMBL2104019 0.80 TAAR1 (0.43) HTR1BHTR2ASIGMAR1MEN1KMT2A
SCHEMBL2100218 0.80 HTT (0.33) HTTADRB2KCNN4SIGMAR1
SCHEMBL2272064 0.77 TP53 (0.35)
SCHEMBL2269778 0.76 HTT (0.41) HTTADRB2HTR1BHTR2APRMT6
SCHEMBL704628 0.74 LTA4H (0.35) HTTSIGMAR1MEN1KMT2ATDP1
SCHEMBL11152840 0.72 LTA4H (0.36) SIGMAR1MEN1KMT2A
SCHEMBL2272014 0.72 TP53 (0.38) KCNN4
SCHEMBL2273238 0.72 L3MBTL1 (0.48) HTTHTR1BHTR2ASIGMAR1MEN1
SCHEMBL2104195 0.69 SIGMAR1 (0.42) HTTHTR2ASIGMAR1MEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed