SCHEMBL2104195

SCHEMBL2104195

CCN(CC)CC[SiH](Cl)c1ccccc1

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SIGMAR1 Q99720 4/20 0.42
KCNH2 Q12809 5/20 0.40
DRD3 P35462 5/20 0.40
CHRM1 P11229 4/20 0.40
SLC6A2 P23975 4/20 0.40
SLC6A4 P31645 4/20 0.40
SLC6A3 Q01959 4/20 0.40
CHRM2 P08172 3/20 0.40
ADRA2A P08913 3/20 0.40
DRD1 P21728 3/20 0.40
ADRA1A P35348 3/20 0.40
OPRM1 P35372 3/20 0.40
HTR1A P08908 2/20 0.40
CYP2D6 P10635 4/20 0.38
HTT P42858 3/20 0.38
EBP Q15125 2/20 0.38
ESR1 P03372 2/20 0.38
ADORA3 P0DMS8 2/20 0.38
PTGS1 P23219 2/20 0.38
HTR6 P50406 2/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2268231 0.87 SIGMAR1 (0.50) SIGMAR1KCNH2DRD3CHRM1SLC6A2
SCHEMBL2104136 0.80 TAAR1 (0.43) SIGMAR1KCNH2DRD3CHRM1SLC6A2
SCHEMBL2101606 0.80 KCNH2 (0.38) SIGMAR1KCNH2DRD3CHRM1SLC6A2
SCHEMBL2272064 0.77 TP53 (0.35)
SCHEMBL2270931 0.76 SIGMAR1 (0.44) SIGMAR1KCNH2DRD3CHRM1SLC6A2
SCHEMBL704628 0.74 LTA4H (0.35) SIGMAR1HTTKMT2AMAPTMEN1
SCHEMBL11152840 0.72 LTA4H (0.36) SIGMAR1KCNH2KMT2AMEN1LTA4H
SCHEMBL2272014 0.72 TP53 (0.38) TSHRALDH1A1LMNA
SCHEMBL2100897 0.72 SIGMAR1 (0.47) SIGMAR1HTR2ATSHRALDH1A1LMNA
SCHEMBL2102244 0.69 HTT (0.39) SIGMAR1HTR1AHTTKMT2AHTR2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed