SCHEMBL2102292

SCHEMBL2102292

CNC(Cl)c1ccccc1[SiH3]

nearest known ligand 0.32

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
TSHR P16473 1/20 0.32
HTR2A P28223 1/20 0.32
SLC6A4 P31645 1/20 0.32
ADRB2 P07550 1/20 0.30
ADRB1 P08588 1/20 0.30
CYP2D6 P10635 1/20 0.30
NFKB1 P19838 1/20 0.30
HIF1A Q16665 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2100217 0.78 SIGMAR1 (0.36) TSHRADRB2ADRB1
SCHEMBL235044 0.77 TSHR (0.35) TSHRHTR2ASLC6A4CYP2D6NFKB1
SCHEMBL2267939 0.76 HTR2A (0.44) TSHRHTR2ASLC6A4CYP2D6NFKB1
SCHEMBL68911 0.75 GABRA1 (0.36) TSHRCYP2D6NFKB1HIF1A
Hydrochloric Acid SCHEMBL5388739 0.74 BLM (0.47) TSHRHTR2ASLC6A4ADRB2ADRB1
SCHEMBL2104519 0.74 TSHR (0.39) TSHRSLC6A4HIF1A
SCHEMBL10318395 0.71 TRPA1 (0.34) ADRB2ADRB1CYP2D6NFKB1HIF1A
SCHEMBL2100798 0.70 NISCH (0.36)
SCHEMBL10717115 0.70 TSHR (0.38) TSHR
SCHEMBL3378475 0.69 GABRA1 (0.50) TSHRHIF1A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed