SCHEMBL2102293

SCHEMBL2102293

CNC[SiH](Cl)c1ccccc1

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 1/20 0.38
CYP3A4 P08684 1/20 0.38
MAPT P10636 1/20 0.38
TAAR1 Q96RJ0 5/20 0.37
ATM Q13315 1/20 0.37
HTR2A P28223 2/20 0.34
HRH1 P35367 2/20 0.34
HTR1B P28222 2/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
TSHR P16473 1/20 0.33
HTR1D P28221 1/20 0.33
MEN1 O00255 1/20 0.33
KMT2A Q03164 1/20 0.33
SIGMAR1 Q99720 2/20 0.32
CALM1 P0DP23 1/20 0.31
HTR2C P28335 1/20 0.31
SLC18A2 Q05940 1/20 0.30
LMNA P02545 1/20 0.30
CYP2D6 P10635 1/20 0.30
KCNN4 O15554 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2100218 0.78 HTT (0.33) SIGMAR1KCNN4
SCHEMBL2104019 0.78 TAAR1 (0.43) KDM4ECYP3A4MAPTTAAR1ATM
SCHEMBL2273238 0.74 L3MBTL1 (0.48) KDM4ECYP3A4TAAR1ATMHTR2A
SCHEMBL2272014 0.73 TP53 (0.38) ATMTSHRLMNAKCNN4
SCHEMBL2273783 0.71 HTR2A (0.38) KDM4ECYP3A4MAPTTAAR1ATM
SCHEMBL2272064 0.70 TP53 (0.35)
SCHEMBL6513405 0.70 ALDH1A1 (0.33) KDM4EMAPTMEN1KMT2ALMNA
SCHEMBL27290628 0.69 LOXL2 (0.38) KDM4ECYP3A4TAAR1HTR2AHRH1
SCHEMBL2101473 0.69 TSHR (0.38) KDM4ECYP3A4MAPTTAAR1ATM
SCHEMBL2100400 0.68 TAAR1 (0.42) KDM4ECYP3A4MAPTTAAR1ATM

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed