SCHEMBL2103177

SCHEMBL2103177

CCN[Si](NCC)(c1ccccc1)C(C)(C)C

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KCNN4 O15554 1/20 0.39
RIPK1 Q13546 2/20 0.34
CYP2D6 P10635 2/20 0.33
LMNA P02545 1/20 0.33
TP53 P04637 1/20 0.32
SIGMAR1 Q99720 1/20 0.31
KDM4E B2RXH2 1/20 0.31
ALDH1A1 P00352 1/20 0.31
GAA P10253 1/20 0.31
HPGD P15428 1/20 0.31
HDAC3 O15379 1/20 0.31
HDAC4 P56524 1/20 0.31
HDAC1 Q13547 1/20 0.31
HDAC7 Q8WUI4 1/20 0.31
HDAC2 Q92769 1/20 0.31
HDAC10 Q969S8 1/20 0.31
HDAC11 Q96DB2 1/20 0.31
HDAC8 Q9BY41 1/20 0.31
HDAC6 Q9UBN7 1/20 0.31
HDAC9 Q9UKV0 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2269404 0.78 KCNN4 (0.39) KCNN4RIPK1CYP2D6LMNATP53
SCHEMBL2101131 0.77 KCNN4 (0.36) KCNN4CYP2D6LMNAKDM4EATM
SCHEMBL2100791 0.75 KCNN4 (0.36) KCNN4CYP2D6LMNATP53ALDH1A1
SCHEMBL2103096 0.73 KCNN4 (0.41) KCNN4CYP2D6LMNATP53SIGMAR1
SCHEMBL2102166 0.72 KCNN4 (0.34) KCNN4RIPK1TAAR1
SCHEMBL233708 0.72 KCNN4 (0.39) KCNN4LMNATP53SIGMAR1KDM4E
SCHEMBL2102177 0.72 KCNN4 (0.39) KCNN4LMNATP53SIGMAR1KDM4E
SCHEMBL2268924 0.72 KCNN4 (0.39) KCNN4LMNATP53SIGMAR1KDM4E
SCHEMBL2269585 0.71 KCNN4 (0.33) KCNN4ALDH1A1
SCHEMBL234050 0.70 ESR1 (0.38) KCNN4LMNATP53SIGMAR1KDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed