SCHEMBL2103176

SCHEMBL2103176

CCNC(NCC)C(C)(C)[SiH2]c1ccccc1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SIGMAR1 Q99720 2/20 0.39
KCNN4 O15554 1/20 0.34
PKM P14618 1/20 0.32
RIPK1 Q13546 2/20 0.32
CHRM2 P08172 2/20 0.31
CHRM1 P11229 2/20 0.31
ADRA1A P35348 2/20 0.31
SLC6A3 Q01959 2/20 0.31
KCNH2 Q12809 2/20 0.31
CYP3A4 P08684 2/20 0.31
HTR1A P08908 1/20 0.31
ADRA2A P08913 1/20 0.31
ADORA3 P0DMS8 1/20 0.31
SMPD1 P17405 1/20 0.31
DRD1 P21728 1/20 0.31
TBXA2R P21731 1/20 0.31
SLC6A2 P23975 1/20 0.31
SLC6A4 P31645 1/20 0.31
OPRM1 P35372 1/20 0.31
DRD3 P35462 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2100788 0.82 SIGMAR1 (0.37) SIGMAR1KCNN4RIPK1LMNAALDH1A1
SCHEMBL2102164 0.80 SIGMAR1 (0.35) SIGMAR1KCNN4MEN1KMT2AHRH1
SCHEMBL2101130 0.79 HTR2A (0.32) SIGMAR1KCNN4PKMRIPK1CHRM2
SCHEMBL2103612 0.70 ADRA2B (0.40) SIGMAR1RIPK1CHRM2CHRM1ADRA1A
SCHEMBL2103073 0.70 TSHR (0.33) RIPK1GPR55
SCHEMBL234049 0.68 SIGMAR1 (0.44) SIGMAR1KCNN4PKMCYP3A4LMNA
SCHEMBL2268940 0.68 KCNN4 (0.35) KCNN4LMNACYP2D6HTT
SCHEMBL2102686 0.68 HSP90AA1 (0.32) SIGMAR1KCNN4LMNACYP2D6GPR55
SCHEMBL2102750 0.68 PGR (0.34) SIGMAR1RIPK1KCNH2ADRA2AALDH1A1
SCHEMBL15147452 0.67 RIPK1 (0.35) KCNN4PKMRIPK1SLC6A2LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed