SCHEMBL2152995

SCHEMBL2152995

C#Cc1ccccc1CCC

nearest known ligand 0.39

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
CYP2E1 P05181 1/20 0.38
CYP2C8 P10632 1/20 0.38
CYP2D6 P10635 1/20 0.38
CYP2A6 P11509 1/20 0.38
CYP2C9 P11712 1/20 0.38
CYP2B6 P20813 1/20 0.38
CYP2C19 P33261 1/20 0.38
HTR1A P08908 1/20 0.36
PYCR1 P32322 2/20 0.35
LIPG Q9Y5X9 1/20 0.33
GABRA1 P14867 1/20 0.33
GABRB2 P47870 1/20 0.33
AR P10275 1/20 0.33
ADRA2A P08913 1/20 0.33
ADRA2B P18089 1/20 0.33
ADRA2C P18825 1/20 0.33
MITF O75030 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL668402 0.88 LIPG (0.43) CYP2D6CYP2C9CYP2C19HTR1ALIPG
SCHEMBL2774096 0.86 LIPG (0.50) LIPG
SCHEMBL31529667 0.84 LIPG (0.53) LIPG
SCHEMBL2350389 0.84 LIPG (0.53) LIPG
SCHEMBL1141480 0.82 HTR1A (0.38) CYP2E1CYP2C8CYP2D6CYP2A6CYP2C9
SCHEMBL29456692 0.82 GABRA1 (0.46) CYP2E1CYP2C8CYP2D6CYP2A6CYP2B6
SCHEMBL4953056 0.82 GABRA1 (0.46) CYP2E1CYP2C8CYP2D6CYP2A6CYP2B6
SCHEMBL4949097 0.82 CYP2E1 (0.32) CYP2E1CYP2C8CYP2D6CYP2A6CYP2C9
SCHEMBL24767383 0.80 CTSL (0.33) CYP2E1CYP2C8CYP2D6CYP2A6CYP2C9
SCHEMBL4950688 0.78 TAAR1 (0.54) CYP2D6CYP2A6ADRA2C

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 60 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-111592607-B Application of covalent organic framework material of supported rhodium catalyst in alkyne polymerization 北京理工大学 2023-06-20 CN claimed
US-9920160-B2 Method for synthesis of polymer containing multiple epoxy groups ZHEJIANG UNIVERSITY (CN) 2018-03-20 US claimed
US-20170044304-A1 Method for synthesis of polymer containing multiple epoxy groups UNIV ZHEJIANG (CN) 2017-02-16 US claimed
US-7208869-B2 Light emitting device and method of manufacturing the same SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2007-04-24 US claimed
US-6887392-B2 Light emitting device and method of manufacturing the same SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2005-05-03 US claimed
US-20050029935-A1 Light emitting device and method of manufacturing the same SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2005-02-10 US claimed
US-20030006699-A1 Light emitting device and method of manufacturing the same SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2003-01-09 US claimed
CN-118561667-B Preparation method of ethane bridge bond-containing negative monomer liquid crystal 山东浩华新材料科技有限公司 2025-05-30 CN disclosed
CN-118561667-A Preparation method of ethane bridge bond-containing negative monomer liquid crystal 山东浩华新材料科技有限公司 2024-08-30 CN disclosed
CN-111592607-B Application of covalent organic framework material of supported rhodium catalyst in alkyne polymerization 北京理工大学 2023-06-20 CN disclosed
CN-108822869-B Chlorine-containing liquid crystal compound, composition thereof and high-frequency assembly comprising chlorine-containing liquid crystal compound 西安近代化学研究所 2022-10-25 CN disclosed
US-9920160-B2 Method for synthesis of polymer containing multiple epoxy groups ZHEJIANG UNIVERSITY (CN) 2018-03-20 US disclosed
US-9620714-B2 Method for forming pattern, method for manufacturing light emitting device, and light emitting device SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2017-04-11 US disclosed
US-20050037137-A1 ink jet printing; first and second piezoelectric elements are incorporated into the ink head, and the timings for causing displacement are synchronized, whereby the mixture can be discharged continuously, or the discharge can be stopped instantaneously SEMICONDUCTOR ENERGY LABORATORY (JP) 2005-02-17 US disclosed
US-20050029935-A1 Light emitting device and method of manufacturing the same SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2005-02-10 US disclosed
US-6822629-B2 Light emitting device SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2004-11-23 US disclosed
US-20030010283-A1 Printing device and method of manufacturing a light emitting device SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2003-01-16 US disclosed
US-20030008429-A1 Method of manufacturing a light emitting device SEMICONDUCTOR ENERGY LABORATORY CO., INC. (JP) 2003-01-09 US disclosed
US-20030006699-A1 Light emitting device and method of manufacturing the same SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2003-01-09 US disclosed
US-20020021268-A1 Light emitting device SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2002-02-21 US disclosed