SCHEMBL217014

SCHEMBL217014

CS(=O)(=O)O.O=C1NC(=O)c2c1ccc1ccccc21

nearest known ligand 0.47

Known targets — ChEMBL curated mechanism

ABL1ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB2AGTR1BCL2BCL2A1BCL2L1BCL2L10BCL2L2BCRBRAFCHRM1CHRNA10CHRNA9DRD1DRD2DRD3DRD4DRD5EGFRF2FLT1FLT4GCKGHSRGNRHRGRIN1GRIN2AGRIN2BGRIN2CGRIN2DGRIN3AGRIN3BHTR1AHTR1BHTR1DHTR2AHTR2CHTR3AIDH2KDRKITMAOBMCL1MTTPPP4HBPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PIKFYVEROCK1ROCK2SLC18A2SLC6A2SLC6A3SLC6A4TACR1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8gyrAgyrBparCparEpol

The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAOB known ✓ P27338 1/20 0.39
DNMT1 P26358 1/20 0.47
PARP1 P09874 2/20 0.44
KMT2A Q03164 3/20 0.43
MEN1 O00255 2/20 0.43
ALDH1A1 P00352 3/20 0.42
SMN1; SMN2 Q16637 2/20 0.42
KDM4E B2RXH2 2/20 0.42
HPGD P15428 2/20 0.42
CYP1A2 P05177 1/20 0.42
CYP2C19 P33261 1/20 0.42
HTT P42858 1/20 0.42
CDK5 Q00535 1/20 0.42
CDK5R1 Q15078 1/20 0.42
NCOA1 Q15788 1/20 0.42
NCOA3 Q9Y6Q9 1/20 0.42
MAPT P10636 1/20 0.42
RAB9A P51151 1/20 0.42
CES1 P23141 2/20 0.41
GAA P10253 2/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7171073 1.00 DNMT1 (0.47) DNMT1PARP1KMT2AMEN1ALDH1A1
SCHEMBL57037 0.88 DNMT1 (0.53) DNMT1PARP1KMT2AMEN1ALDH1A1
SCHEMBL11542348 0.87 DNMT1 (0.52) DNMT1PARP1KMT2AMEN1ALDH1A1
SCHEMBL7486488 0.87 DNMT1 (0.52) DNMT1PARP1KMT2AMEN1ALDH1A1
SCHEMBL218236 0.87 SMN1; SMN2 (0.46) DNMT1PARP1KMT2AMEN1ALDH1A1
Trifluoromethanesulfonic Acid SCHEMBL6306910 0.87 DNMT1 (0.44) DNMT1PARP1KMT2AMEN1ALDH1A1
SCHEMBL7166848 0.85 ALDH1A1 (0.49) DNMT1PARP1KMT2AMEN1ALDH1A1
Phosphoric Acid SCHEMBL2289263 0.84 PARP1 (0.46) DNMT1PARP1KMT2AMEN1ALDH1A1
SCHEMBL7168131 0.83 ALDH1A1 (0.40) DNMT1PARP1KMT2AMEN1ALDH1A1
Carbamic Acid SCHEMBL17558332 0.83 WDR5 (0.46) DNMT1PARP1KMT2AMEN1ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 55 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1788436-B1 Rework process for photoresist film SHINETSU CHEMICAL CO (JP) 2013-01-09 EP disclosed
EP-1813985-B1 Antireflection film composition, substrate, and pattering process SHINETSU CHEMICAL CO (JP) 2012-10-31 EP disclosed
US-8288072-B2 Antireflection film; fast etching speed whcih reduces deformation; accuracy; 2,3-epoxypropyl methacrylate ester-styrene copolymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-10-16 US disclosed
US-8088554-B2 Bottom resist layer composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD (JP) 2012-01-03 US disclosed
US-7947839-B2 Heterocyclic-substituted bis-1,8 naphthalimide compounds, antibody drug conjugates, and methods of use GENENTECH, INC. (US) 2011-05-24 US disclosed
US-7868407-B2 Substrate comprising a lower silicone resin film and an upper silicone resin film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-01-11 US disclosed
US-7745104-B2 Polymer having a hydrocarbon chain backbone and containing units derived from norbornadiene, indene, benzofuran, benzothiophene, acenaphthene, or vinyl pyrene, fluorene, phenanthrene, chrysene, naphthacene, pentacene, or acenaphthene; excellent etching resistance; shorter wavelengths SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-29 US disclosed
US-20100151382-A1 Bottom resist layer composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-17 US disclosed
US-7687228-B2 Antireflection film composition and patterning process using the same SHIN ETSU CHEMICAL CO., LTD. (JP) 2010-03-30 US disclosed
US-7655378-B2 Negative resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-02-02 US disclosed
US-7169541-B2 Compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-01-30 US disclosed
US-20060234158-A1 Bottom resist layer composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-10-19 US disclosed
US-20060182751-A1 Heterocyclic-substituted bis-1,8 naphthalimide compounds, antibody drug conjugates, and methods of use GENENTECH, INC. (US) 2006-08-17 US disclosed
US-20060147836-A1 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-07-06 US disclosed
WO-2006060533-A2 CONJUGATES OF 1, 8-BIS-NAPHTHALIMIDES WITH AN ANTIBODY GENENTECH, INC. (US) 2006-06-08 WO disclosed
US-20050079446-A1 Novel polymerizable compound, polymer, positive-resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-04-14 US disclosed
US-20050079440-A1 Novel polymer, positive resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-04-14 US disclosed
US-20050014092-A1 Novel compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-01-20 US disclosed
US-20040259037-A1 Resist lower layer film material and method for forming a pattern SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-12-23 US disclosed
US-20040241577-A1 Resist lower layer film material and method for forming a pattern SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-12-02 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20060182751-A1 Heterocyclic-substituted bis-1,8 naphthalimide compounds, antibody drug conjugates, and methods of use CCNY, CCNI, MKI67 MAOB 1266/4885DNMT1 1324/4885PARP1 79/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.