Known targets — ChEMBL curated mechanism
BTKCACNA1CCACNA1DCACNA1FCACNA1SCACNA2D1CACNA2D2DRD2GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQHRH1HTR2AP2RY12
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SMN1; SMN2 | Q16637 | 3/20 | 0.46 |
| ▸ | TSHR | P16473 | 1/20 | 0.46 |
| ▸ | DNMT1 | P26358 | 1/20 | 0.44 |
| ▸ | PARP1 | P09874 | 2/20 | 0.41 |
| ▸ | KMT2A | Q03164 | 4/20 | 0.41 |
| ▸ | MEN1 | O00255 | 3/20 | 0.41 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.41 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.41 |
| ▸ | POLB | P06746 | 1/20 | 0.41 |
| ▸ | HSP90AA1 | P07900 | 1/20 | 0.40 |
| ▸ | HSP90AB1 | P08238 | 1/20 | 0.40 |
| ▸ | CES1 | P23141 | 2/20 | 0.39 |
| ▸ | WDR5 | P61964 | 1/20 | 0.38 |
| ▸ | CDK4 | P11802 | 2/20 | 0.38 |
| ▸ | CCND1 | P24385 | 2/20 | 0.38 |
| ▸ | CCNB2 | O95067 | 1/20 | 0.38 |
| ▸ | CCNE2 | O96020 | 1/20 | 0.38 |
| ▸ | PRKCG | P05129 | 1/20 | 0.38 |
| ▸ | PRKCB | P05771 | 1/20 | 0.38 |
| ▸ | CDK1 | P06493 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL7166848 | 0.89 | ALDH1A1 (0.49) | SMN1; SMN2DNMT1PARP1KMT2AMEN1 | |
| SCHEMBL217014 | 0.87 | DNMT1 (0.47) | SMN1; SMN2DNMT1PARP1KMT2AMEN1 | |
| SCHEMBL7171073 | 0.87 | DNMT1 (0.47) | SMN1; SMN2DNMT1PARP1KMT2AMEN1 | |
| SCHEMBL57037 | 0.84 | DNMT1 (0.53) | SMN1; SMN2TSHRDNMT1PARP1KMT2A | |
| SCHEMBL7486488 | 0.83 | DNMT1 (0.52) | SMN1; SMN2TSHRDNMT1PARP1KMT2A | |
| SCHEMBL11542348 | 0.83 | DNMT1 (0.52) | SMN1; SMN2TSHRDNMT1PARP1KMT2A | |
| Trifluoromethanesulfonic Acid SCHEMBL6306910 | 0.83 | DNMT1 (0.44) | SMN1; SMN2TSHRDNMT1PARP1KMT2A | |
| Carbamic Acid SCHEMBL17558332 | 0.82 | WDR5 (0.46) | SMN1; SMN2DNMT1PARP1KMT2AMEN1 | |
| Phosphoric Acid SCHEMBL2289263 | 0.80 | PARP1 (0.46) | SMN1; SMN2DNMT1PARP1KMT2AMEN1 | |
| SCHEMBL113917 | 0.79 | TSHR (0.44) | SMN1; SMN2TSHRKMT2AALDH1A1HSP90AA1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 53 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1788436-B1 | Rework process for photoresist film | SHINETSU CHEMICAL CO (JP) | 2013-01-09 | — | — | EP | disclosed |
| EP-1813985-B1 | Antireflection film composition, substrate, and pattering process | SHINETSU CHEMICAL CO (JP) | 2012-10-31 | — | — | EP | disclosed |
| US-8288072-B2 | Antireflection film; fast etching speed whcih reduces deformation; accuracy; 2,3-epoxypropyl methacrylate ester-styrene copolymer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-10-16 | — | — | US | disclosed |
| US-8088554-B2 | Bottom resist layer composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD (JP) | 2012-01-03 | — | — | US | disclosed |
| CN-101974121-A | Chemical amplified high-resolution silicon-containing I-ray ultraviolet photoresist and forming resin thereof | KUNSHAN XIDI ELECTRO OPTIC MATERIALS CO LTD | 2011-02-16 | — | — | CN | disclosed |
| US-7868407-B2 | Substrate comprising a lower silicone resin film and an upper silicone resin film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-01-11 | — | — | US | disclosed |
| US-7745104-B2 | Polymer having a hydrocarbon chain backbone and containing units derived from norbornadiene, indene, benzofuran, benzothiophene, acenaphthene, or vinyl pyrene, fluorene, phenanthrene, chrysene, naphthacene, pentacene, or acenaphthene; excellent etching resistance; shorter wavelengths | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-29 | — | — | US | disclosed |
| US-20100151382-A1 | Bottom resist layer composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-17 | — | — | US | disclosed |
| US-7687228-B2 | Antireflection film composition and patterning process using the same | SHIN ETSU CHEMICAL CO., LTD. (JP) | 2010-03-30 | — | — | US | disclosed |
| CN-100590529-C | Silicon containing 193nm negative photo resist and membrane forming resin | KUNSHAN XIDI PHOTOELECTRIC MATERIAL CO LTD | 2010-02-17 | — | — | CN | disclosed |
| CN-1834785-A | Silicon contg. 193nm negative photo resist and membrane forming resin | HUAFEI MICROELECTRONIC MATERIA (CN) | 2006-09-20 | — | — | CN | disclosed |
| CN-1828418-A | 193nm photoresist containing silicon coupling agent and its filming resin | SUZHOU HUAFEI MICROELECTRONICS (CN) | 2006-09-06 | — | — | CN | disclosed |
| CN-1818781-A | Dark ultraviolet negative photoresist and filming resin | HUAFEI MICRO ELECTRONIC MATERI (CN) | 2006-08-16 | — | — | CN | disclosed |
| CN-1818782-A | Dark ultraviolet negative photoresist and filming resin | HUAFEI MICRO ELECTRONIC MATERI (CN) | 2006-08-16 | — | — | CN | disclosed |
| US-20060147836-A1 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2006-07-06 | — | — | US | disclosed |
| US-20050079446-A1 | Novel polymerizable compound, polymer, positive-resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-04-14 | — | — | US | disclosed |
| US-20050079440-A1 | Novel polymer, positive resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-04-14 | — | — | US | disclosed |
| US-20050014092-A1 | Novel compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-01-20 | — | — | US | disclosed |
| US-20040259037-A1 | Resist lower layer film material and method for forming a pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-12-23 | — | — | US | disclosed |
| US-20040241577-A1 | Resist lower layer film material and method for forming a pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-12-02 | — | — | US | disclosed |