SCHEMBL21794265

SCHEMBL21794265

O=S(=O)(O)c1c(-c2ccccc2)cc(-c2ccccc2)cc1-c1ccccc1

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
PTPN1 P18031 2/20 0.47
SMN1; SMN2 Q16637 2/20 0.43
BACE1 P56817 1/20 0.43
TSHR P16473 1/20 0.43
MEN1 O00255 1/20 0.42
APAF1 O14727 1/20 0.42
NPC1 O15118 1/20 0.42
LMNA P02545 1/20 0.42
MAPT P10636 1/20 0.42
THRB P10828 1/20 0.42
XBP1 P17861 1/20 0.42
PTBP1 P26599 1/20 0.42
HTT P42858 1/20 0.42
RAB9A P51151 1/20 0.42
GALK1 P51570 1/20 0.42
BLM P54132 1/20 0.42
SMAD3 P84022 1/20 0.42
KMT2A Q03164 1/20 0.42
ATM Q13315 1/20 0.42
NPSR1 Q6W5P4 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL21794139 0.91 MMP3 (0.52) PTPN1MEN1LMNAMAPTHTT
SCHEMBL21794269 0.86 ALDH1A1 (0.48) SMN1; SMN2BACE1TSHRMEN1MAPT
SCHEMBL10029667 0.83 LMNA (0.50) PTPN1SMN1; SMN2BACE1MEN1APAF1
SCHEMBL21794264 0.83 TSHR (0.46) SMN1; SMN2BACE1TSHRKMT2APTGS2
SCHEMBL23432774 0.82 EGFR (0.62) PTPN1TSHRMAPTRAB9AL3MBTL1
SCHEMBL21794266 0.82 ESR1 (0.50) MEN1LMNAKMT2A
SCHEMBL24581546 0.80 EGFR (0.47) SMN1; SMN2BACE1NPC1MAPTRAB9A
SCHEMBL28181427 0.79 ALDH1A1 (0.43) PTPN1SMN1; SMN2BACE1MEN1APAF1
SCHEMBL1443131 0.79 PGAM1 (0.40) PTPN1SMN1; SMN2BACE1TSHRMEN1
SCHEMBL21794163 0.79 CA2 (0.41) MEN1KMT2AIKBKBCHUKPTGS2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2023162837-A1 POSITIVE ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMATION METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND COMPOUND 富士フイルム株式会社 2023-08-31 WO disclosed
WO-2023162838-A1 ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMATION METHOD AND ELECTRONIC DEVICE MANUFACTURING METHOD 富士フイルム株式会社 2023-08-31 WO disclosed
WO-2023008347-A1 ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, METHOD FOR FORMING PATTERN, AND METHOD FOR PRODUCING ELECTRONIC DEVICE 富士フイルム株式会社 2023-02-02 WO disclosed
US-20210165325-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOUND FUJIFILM CORPORATION (JP) 2021-06-03 US disclosed
WO-2020045534-A1 ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMATION METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOUND 富士フイルム株式会社 2020-03-05 WO disclosed