SCHEMBL2193202

SCHEMBL2193202

C=Cc1cccc2c(C(=O)OC3CCCCc4ccccc43)cccc12

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
IDO1 P14902 4/20 0.39
ALDH1A1 P00352 3/20 0.38
TDP1 Q9NUW8 2/20 0.38
KDM4E B2RXH2 2/20 0.38
MAPT P10636 1/20 0.38
TSHR P16473 1/20 0.38
HSD17B10 Q99714 1/20 0.38
TAS1R3 Q7RTX0 6/20 0.36
TAS1R1 Q7RTX1 6/20 0.36
SMN1; SMN2 Q16637 2/20 0.35
POLB P06746 1/20 0.35
PKM P14618 1/20 0.35
NPSR1 Q6W5P4 1/20 0.35
PIN1 Q13526 2/20 0.35
TAS1R2 Q8TE23 3/20 0.35
MEN1 O00255 1/20 0.34
KMT2A Q03164 1/20 0.34
AURKA O14965 2/20 0.34
RPS6KB1 P23443 2/20 0.34
AURKB Q96GD4 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12415891 0.88 KDM4E (0.42) IDO1ALDH1A1TDP1KDM4EMAPT
SCHEMBL91648 0.83 IDO1 (0.38) IDO1ALDH1A1TDP1KDM4ETAS1R3
SCHEMBL9610478 0.78 KDM4E (0.34) ALDH1A1TDP1KDM4EMAPTTSHR
SCHEMBL12416486 0.77 CTSV (0.40) IDO1ALDH1A1TDP1KDM4ETAS1R3
SCHEMBL2772790 0.77 MTNR1A (0.36) ALDH1A1TDP1KDM4EMAPTTSHR
SCHEMBL2192882 0.76 TAS1R3 (0.56) IDO1ALDH1A1KDM4EMAPTTAS1R3
SCHEMBL14825851 0.75 PIN1 (0.37) TDP1TAS1R3TAS1R1PIN1TAS1R2
SCHEMBL2775387 0.74 POLB (0.35) ALDH1A1TDP1KDM4EMAPTTSHR
SCHEMBL9610356 0.74 TSHR (0.32) ALDH1A1KDM4EMAPTTSHRPIN1
SCHEMBL9610300 0.74 MTNR1A (0.35) ALDH1A1TDP1KDM4EMAPTTSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8501384-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-08-06 US disclosed
US-8501384-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-08-06 US disclosed
US-8501384-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-08-06 US disclosed
US-20110171580-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-07-14 US disclosed
US-20110171580-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-07-14 US disclosed
US-20110171580-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-07-14 US disclosed