SCHEMBL220568

SCHEMBL220568

CC(C)(C)c1ccc(S(OS(=O)(=O)C(F)(F)F)(c2ccc(C(C)(C)C)cc2)c2ccc(C(C)(C)C)cc2)cc1

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 6/20 0.48
RORA P35398 1/20 0.44
HSD11B1 P28845 7/20 0.43
HSD17B3 P37058 1/20 0.43
CA1 P00915 2/20 0.41
CA2 P00918 2/20 0.41
CA9 Q16790 1/20 0.41
LMNA P02545 2/20 0.40
GAA P10253 1/20 0.40
UQCRB P14927 2/20 0.40
BCHE P06276 1/20 0.40
ACHE P22303 1/20 0.40
HSD17B2 P37059 1/20 0.40
MAPT P10636 3/20 0.39
HPGD P15428 2/20 0.39
TDP1 Q9NUW8 2/20 0.39
SMN1; SMN2 Q16637 2/20 0.39
TP53 P04637 2/20 0.39
MEN1 O00255 2/20 0.39
CYP1A2 P05177 2/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL387181 0.95 HSD11B1 (0.50) ALDH1A1RORAHSD11B1HSD17B3CA1
SCHEMBL3136709 0.95 HSD11B1 (0.50) ALDH1A1RORAHSD11B1HSD17B3CA1
SCHEMBL2436995 0.86 ALDH1A1 (0.46) ALDH1A1RORAHSD11B1HSD17B3CA1
SCHEMBL2438154 0.86 ALDH1A1 (0.46) ALDH1A1RORAHSD11B1HSD17B3CA1
SCHEMBL1803692 0.85 KIF11 (0.47) ALDH1A1HSD11B1CA1CA2CA9
SCHEMBL2438821 0.84 HSD11B1 (0.47) ALDH1A1RORAHSD11B1HSD17B3CA1
SCHEMBL2435496 0.84 HSD11B1 (0.47) ALDH1A1RORAHSD11B1HSD17B3CA1
SCHEMBL1593146 0.83 RORA (0.43) ALDH1A1RORAHSD11B1HSD17B3CA1
SCHEMBL51946 0.82 CA1 (0.43) ALDH1A1RORAHSD11B1HSD17B3CA1
SCHEMBL36225 0.81 GAA (0.45) ALDH1A1CA1CA2CA9GAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 181 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2728408-B1 Deep-ultraviolet chemically-amplified positive photoresist BOE TECHNOLOGY GROUP CO LTD (CN) 2015-07-15 EP claimed
US-9023590-B2 Deep-ultraviolet chemically-amplified positive photoresist BOE TECHNOLOGY GROUP CO., LTD. (CN) 2015-05-05 US claimed
EP-1099983-B1 Chemically amplified positive resist composition and patterning method SHINETSU CHEMICAL CO (JP) 2014-08-06 EP claimed
EP-2728408-A1 Deep-ultraviolet chemically-amplified positive photoresist Boe Technology Group Co. Ltd. (CN) 2014-05-07 EP claimed
US-20140120474-A1 Deep-Ultraviolet Chemically-Amplified Positive Photoresist BOE TECHNOLOGY GROUP CO., LTD. (CN) 2014-05-01 US claimed
US-11021572-B2 Photosensitive resin composition, cured product of same, interlayer insulating film, surface protective film and electronic component HD MICROSYSTEMS, LTD. (JP) 2021-06-01 US disclosed
US-20190161580-A1 PHOTOSENSITIVE RESIN COMPOSITION, CURED PRODUCT OF SAME, INTERLAYER INSULATING FILM, SURFACE PROTECTIVE FILM AND ELECTRONIC COMPONENT HD MICROSYSTEMS, LTD. (JP) 2019-05-30 US disclosed
US-10025188-B2 Resist pattern-forming method JSR CORPORATION (JP) 2018-07-17 US disclosed
US-20170322492-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-11-09 US disclosed
US-20160320705-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2016-11-03 US disclosed
US-9348226-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2016-05-24 US disclosed
US-9329478-B2 Polysiloxane composition and pattern-forming method JSR CORPORATION (JP) 2016-05-03 US disclosed
US-6168897-B1 PATTERNWISE-EXPOSING THE LAMINATED LAYER COMPRISING LIGHT SENSITIVE LAYER AND FLUORESCENT LIGHT-GENERATING LAYER TO ELECTROMAGNETIC RADIATION AND AN ELECTRON BEAM TO GENERATE A FLUORESCENT LIGHT CAUSING PHOTOCHEMICAL REACTION, DEVELOPING KABUSHIKI KAISHA TOSHIBA (JP) 2001-01-02 US disclosed
EP-1033624-A1 RADIATION-SENSITIVE COMPOSITION OF CHEMICAL AMPLIFICATION TYPE Clariant International Ltd. (CH) 2000-09-06 EP disclosed
US-5928841-A Method of photoetching at 180 to 220 KABUSHIKI KAISHA TOSHIBA (JP) 1999-07-27 US disclosed
US-RE35821-E Pattern forming method including the formation of an acidic coating layer on the radiation-sensitive layer KABUSHIKI KAISHA TOSHIBA (JP) 1998-06-09 US disclosed
US-5753407-A Polyamic acid composition KABUSHIKI KAISHA TOSHIBA (JP) 1998-05-19 US disclosed
US-5585217-A Polyamic acid composition KABUSHIKI KAISHA TOSHIBA (JP) 1996-12-17 US disclosed
US-5449705-A Silicon-containing polyamic acid derivative and photosensitive resin composition using it CHISSO CORPORATION (JP) 1995-09-12 US disclosed
US-5326675-A Pattern forming method including the formation of an acidic coating layer on the radiation-sensitive layer KABUSHIKI KAISHA TOSHIBA (JP) 1994-07-05 US disclosed