Known targets — ChEMBL curated mechanism
ABCC9ABL1ACEACHEACVR1ADORA1ADORA2AADORA2BADORA3ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALOX5ATP4AATP4BBCRBTKCACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNB1CHRNDCHRNECHRNGCRBNCUL4ACXCR1CXCR2DDB1DDCDHFRDPP4DRD2DRD3DRD4EGFRERBB2ERBB4ESR1ESR2FDPSFKBP1AFLT1FLT3FLT4GARTGHSRGRIA1GRIA2GRIA3GRIA4GRIK1GRIK2GRIK3GRIK4GRIK5GRIN2AGSK3AGSK3BHDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IDH1IDH2IMPA1ITGA2BITGB3JAK1JAK2JAK3KCNJ11KCNK3KCNK9KDRKITMEN1METMMP1MMP13MMP7MMP8NANOD2NS5bODC1OPG057OPRD1OPRK1OPRM1PPARP1PARP2PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PKLRPPARDPPATPTGS1PTGS2RBX1ROCK1ROCK2RRM1RRM2RRM2BSCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC10A2SLC5A2SLC6A2SLC6A3SLC6A4SLC9A3SYKTACR1THRATHRBTOP1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYK2TYMSVDRampCblablaT-3blaT-4blaT-5blaT-6blaUOE-1dacAdacBdacCfolAfolPftsIgyrAgyrBileSmecAmrcAmrcBmrdAparCparEpbp2pbp4pbpApbpFrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUthyAykgMykgO
The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Ammonia Solution, Strong SCHEMBL27815995 | 0.97 | — | — | |
| SCHEMBL604384 | 0.96 | — | — | |
| Hydrochloric Acid SCHEMBL28245463 | 0.93 | — | — | |
| SCHEMBL10382188 | 0.93 | — | — | |
| Hydrochloric Acid SCHEMBL5152364 | 0.93 | — | — | |
| Fluoride SCHEMBL5015783 | 0.93 | — | — | |
| Bromide SCHEMBL32661614 | 0.93 | — | — | |
| Hydrogen Sulfide SCHEMBL28199988 | 0.93 | — | — | |
| Oxalic Acid SCHEMBL1052359 | 0.82 | HMGCR (0.32) | — | |
| SCHEMBL32662284 | 0.82 | CA2 (0.32) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 197 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260015560-A1 | COMPOSITIONS FOR POST-CMP CLEANING OF MICROELECTRONIC DEVICES | ENTEGRIS INC (US) | 2026-01-15 | — | — | US | claimed |
| EP-3958292-B1 | CLEANING FLUID, METHOD OF CLEANING, AND METHOD OF PREPARING SEMICONDUCTOR WAFER | MITSUBISHI CHEM CORP (JP) | 2025-04-02 | — | — | EP | claimed |
| US-20250026960-A1 | POLISHING SLURRY COMPOSITION | KCTECH CO.,LTD. (KR) | 2025-01-23 | — | — | US | claimed |
| CN-118814176-A | Cleaning composition for chip after chemical mechanical polishing, preparation method and application thereof | 浙江奥首材料科技有限公司 | 2024-10-22 | — | — | CN | claimed |
| CN-118339245-A | Polishing slurry composition | 凯斯科技股份有限公司 | 2024-07-12 | — | — | CN | claimed |
| US-20240230608-A9 | SELECTIVE MONITORING OF BASE CHEMICALS | ECI TECHNOLOGY, INC. (US) | 2024-07-11 | — | — | US | claimed |
| US-20240133852-A1 | SELECTIVE MONITORING OF BASE CHEMICALS | ECI TECHNOLOGY, INC. (US) | 2024-04-25 | — | — | US | claimed |
| WO-2023121037-A1 | POLISHING SLURRY COMPOSITION | 주식회사 케이씨텍 | 2023-06-29 | — | — | WO | claimed |
| US-20230106132-A1 | Cleaning Composition for Post Chemical Mechanical Planarization And Method Of Using The Same | VIBRANTZ CORPORATION | 2023-04-06 | — | — | US | claimed |
| WO-2022159273-A1 | SELECTIVE MONITORING OF BASE CHEMICALS | ECI TECHNOLOGY, INC. (US) | 2022-07-28 | — | — | WO | claimed |
| US-20160201016-A1 | CLEANING COMPOSITION AND METHOD FOR CLEANING SEMICONDUCTOR WAFERS AFTER CMP | CABOT MICROELECTRONICS CORPORATION | 2016-07-14 | — | — | US | claimed |
| WO-2016011331-A1 | CLEANING COMPOSITION FOLLOWING CMP AND METHODS RELATED THERETO | CABOT MICROELECTRONICS CORPORATION (US) | 2016-01-21 | — | — | WO | claimed |
| EP-1904898-B1 | METHOD FOR FINE LINE RESIST STRIPPING | ATOTECH DEUTSCHLAND GMBH (DE) | 2011-08-17 | — | — | EP | claimed |
| EP-1904898-A1 | METHOD FOR FINE LINE RESIST STRIPPING | ATOTECH DEUTSCHLAND GMBH (DE) | 2008-04-02 | — | — | EP | claimed |
| WO-2006128642-A1 | METHOD FOR FINE LINE RESIST STRIPPING | ATOTECH DEUTSCHLAND GMBH (DE) | 2006-12-07 | — | — | WO | claimed |
| EP-1729179-A1 | Method for fine line resist stripping | ATOTECH DEUTSCHLAND GMBH (DE) | 2006-12-06 | — | — | EP | claimed |
| EP-1266956-B1 | Composition for washing a polishing pad and method for washing a polishing pad | JSR CORP (JP) | 2006-04-19 | — | — | EP | claimed |
| US-6740629-B2 | COMPRISES A COMPONENT FOR RENDERING A WATER-INSOLUBLE COMPOUND CONTAINING A METAL ATOM OR ITS ION SEPARATED FROM A SURFACE TO BE POLISHED WATER-SOLUBLE | JSR CORPORATION (JP) | 2004-05-25 | — | — | US | claimed |
| US-20030004085-A1 | Composition for washing a polishing pad and method for washing a polishing pad | JSR CORPORATION (JP) | 2003-01-02 | — | — | US | claimed |
| EP-1266956-A1 | Composition for washing a polishing pad and method for washing a polishing pad | JSR Corporation (JP) | 2002-12-18 | — | — | EP | claimed |