SCHEMBL2353093

SCHEMBL2353093

Cc1ccc(S(=O)(=O)O)cc1.ON=C1CCCc2ccccc21

nearest known ligand 0.63

Known targets — ChEMBL curated mechanism

ABL1BMXBRAFBTKCHRNA4CHRNB2CSNK1EEGFRERBB2F10FLT1FLT3FLT4IGF1RINSRITKJAK3KDRKITOPRM1PARP1PARP2PDGFRBPIK3CDRAF1RETSLC18A2TECTXKdacAdacBdacCftsImrcAmrcBmrdArplArplBrplCrplDrplErplFrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmFrpmGrpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO

The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
▸ ALDH1A1 P00352 6/20 0.62
▸ L3MBTL1 Q9Y468 4/20 0.59
▸ HPGD P15428 1/20 0.59
▸ MAPT P10636 7/20 0.52
▸ KMT2A Q03164 3/20 0.52
▸ MEN1 O00255 2/20 0.52
▸ PLA2G1B P04054 1/20 0.52
▸ ATG4B Q9Y4P1 1/20 0.52
▸ NPSR1 Q6W5P4 1/20 0.48
▸ NPC1 O15118 3/20 0.46
▸ RAB9A P51151 2/20 0.46
▸ SMN1; SMN2 Q16637 2/20 0.46
▸ GAA P10253 3/20 0.45
▸ TDP1 Q9NUW8 2/20 0.44
▸ MAPK1 P28482 1/20 0.41
▸ RECQL P46063 1/20 0.41
▸ LMNA P02545 2/20 0.41
▸ KDM4E B2RXH2 1/20 0.41
▸ HTT P42858 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10813242 0.92 ALDH1A1 (0.51) ALDH1A1L3MBTL1HPGDMAPTKMT2A
SCHEMBL10968040 0.92 ALDH1A1 (0.51) ALDH1A1L3MBTL1HPGDMAPTKMT2A
SCHEMBL2357453 0.80 ALDH1A1 (0.42) ALDH1A1L3MBTL1HPGDMAPTKMT2A
SCHEMBL3216571 0.80 ALDH1A1 (0.66) ALDH1A1L3MBTL1HPGDMAPTKMT2A
SCHEMBL5398653 0.80 L3MBTL1 (0.92) ALDH1A1L3MBTL1HPGDMAPTKMT2A
SCHEMBL29757867 0.80 L3MBTL1 (0.92) ALDH1A1L3MBTL1HPGDMAPTKMT2A
SCHEMBL30043171 0.80 L3MBTL1 (0.92) ALDH1A1L3MBTL1HPGDMAPTKMT2A
SCHEMBL1204352 0.80 L3MBTL1 (0.92) ALDH1A1L3MBTL1HPGDMAPTKMT2A
SCHEMBL395524 0.80 L3MBTL1 (0.92) ALDH1A1L3MBTL1HPGDMAPTKMT2A
Acetic Acid SCHEMBL28410022 0.77 L3MBTL1 (0.74) ALDH1A1L3MBTL1HPGDMAPTKMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1519972-B2 COMPOSITIONS FOR PRODUCING AMINOPLAST PRODUCTS AND METHOD FOR PRODUCING PRODUCTS FROM THESE COMPOSITIONS BOREALIS AGROLINZ MELAMINE (AT) 2011-08-24 — — EP disclosed
EP-1519972-B1 COMPOSITIONS FOR PRODUCING AMINOPLAST PRODUCTS AND METHOD FOR PRODUCING PRODUCTS FROM THESE COMPOSITIONS AMI AGROLINZ MELAMINE INT GMBH (AT) 2006-10-25 — — EP disclosed
EP-1519972-A1 COMPOSITIONS FOR PRODUCING AMINOPLAST PRODUCTS AND METHOD FOR PRODUCING PRODUCTS FROM THESE COMPOSITIONS AMI - Agrolinz Melamine International GmbH (AT) 2005-04-06 — — EP disclosed
EP-1517933-A1 METHOD FOR CURING AMINOPLASTS AMI - Agrolinz Melamine International GmbH (AT) 2005-03-30 — — EP disclosed
WO-2003106524-A1 COMPOSITIONS FOR PRODUCING AMINOPLAST PRODUCTS AND METHOD FOR PRODUCING PRODUCTS FROM THESE COMPOSITIONS AGROLINZ MELAMIN GMBH (AT) 2003-12-24 — — WO disclosed
WO-2003106525-A1 METHOD FOR CURING AMINOPLASTS AGROLINZ MELAMIN GMBH (AT) 2003-12-24 — — WO disclosed
US-5683857-A Method for forming resist pattern by irradiating a resist coating on a substrate, contacting the resist with organic solvent vapor and removing the irradiated portion NIPPON PAINT CO., LTD. (JP) 1997-11-04 — — US disclosed
EP-0626620-B1 Method for forming resist pattern NIPPON PAINT CO LTD (JP) 1996-10-09 — — EP disclosed
EP-0626620-A1 Method for forming resist pattern Nippon Paint Co., Ltd. (JP) 1994-11-30 — — EP disclosed
EP-0232972-B1 NEGATIVE PHOTORESIST COMPOSITIONS AND PROCESSES FOR PREPARING THERMALLY STABLE, NEGATIVE IMAGES USING THEM ROHM AND HAAS COMPANY (US) 1993-09-08 — — EP disclosed
US-5204225-A Depositing actinic radiation sensitive aminoplast and phenoplast containing resin on substrate, baking, exposing to actinic radiation, developing ROHM AND HAAS COMPANY (US) 1993-04-20 — — US disclosed
US-5034304-A Halogenated compositions for negative images ROHM AND HAAS COMPANY (US) 1991-07-23 — — US disclosed
EP-0232972-A2 Negative photoresist compositions and processes for preparing thermally stable, negative images using them ROHM AND HAAS COMPANY (US) 1987-08-19 — — EP disclosed
EP-0139609-B1 PROCESS FOR CURING ACID-CURABLE LACQUERS CIBA-GEIGY AG (CH) 1987-02-04 — — EP disclosed
EP-0139609-A1 Process for curing acid-curable lacquers CIBA-GEIGY AG (CH) 1985-05-02 — — EP disclosed
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