SCHEMBL2525283

SCHEMBL2525283

Cc1c([SiH2]O)cccc1C(C)(C)C

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA2 P00918 2/20 0.46
GABRA1 P14867 1/20 0.45
GABRB2 P47870 1/20 0.45
ALDH1A1 P00352 3/20 0.40
TSHR P16473 1/20 0.40
TDP1 Q9NUW8 1/20 0.40
ALOX12 P18054 1/20 0.34
TRPA1 O75762 1/20 0.32
ATM Q13315 1/20 0.32
NPSR1 Q6W5P4 1/20 0.32
KIF11 P52732 1/20 0.32
SMN1; SMN2 Q16637 2/20 0.31
POLB P06746 1/20 0.31
TYR P14679 1/20 0.31
KDM4E B2RXH2 1/20 0.30
CYP1A2 P05177 1/20 0.30
MAPT P10636 1/20 0.30
ALOX15 P16050 1/20 0.30
ATP2A2 P16615 1/20 0.30
ATP2A3 Q93084 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15655352 0.80 ALDH1A1 (0.50) CA2GABRA1GABRB2ALDH1A1TSHR
SCHEMBL7052674 0.79 CA2 (0.41) CA2GABRA1GABRB2ALDH1A1TSHR
SCHEMBL5061063 0.77 CA2 (0.57) CA2GABRA1GABRB2ALDH1A1TSHR
SCHEMBL2522767 0.75 CA2 (0.42) CA2GABRA1GABRB2ALDH1A1TSHR
SCHEMBL2175294 0.73 TRPA1 (0.48) CA2GABRA1GABRB2ALDH1A1TSHR
SCHEMBL224736 0.71 ALDH1A1 (0.62) CA2GABRA1GABRB2ALDH1A1TSHR
SCHEMBL30660859 0.70 GABRA1 (0.60) CA2GABRA1GABRB2ALDH1A1TSHR
SCHEMBL3167832 0.70 GABRA1 (0.60) CA2GABRA1GABRB2ALDH1A1TSHR
Phenol SCHEMBL28103148 0.68 CA2 (0.54) CA2GABRA1GABRB2ALDH1A1TSHR
SCHEMBL16960647 0.68 CA2 (0.48) CA2GABRA1GABRB2ALDH1A1TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9786576-B2 Positive-type photosensitive resin composition, method for production of resist pattern, semiconductor device, and electronic device HITACHI CHEMICAL COMPANY, LTD (JP) 2017-10-10 US disclosed
US-20170165879-A1 RESIN PRECURSOR, RESIN COMPOSITION CONTAINING SAME, POLYIMIDE RESIN MEMBRANE, RESIN FILM, AND METHOD FOR PRODUCING SAME ASAHI KASEI KABUSHIKI KAISHA (JP) 2017-06-15 US disclosed
EP-2221666-B1 POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCTION OF RESIST PATTERN, AND SEMICONDUCTOR DEVICE HITACHI CHEMICAL CO LTD (JP) 2013-09-18 EP disclosed
US-20110250396-A1 POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCTION OF RESIST PATTERN, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE RESONAC CORPORATION (JP) 2011-10-13 US disclosed
EP-2221666-A1 POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCTION OF RESIST PATTERN, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE Hitachi Chemical Company, Ltd. (JP) 2010-08-25 EP disclosed
US-20100159217-A1 NEGATIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERNS, AND ELECTRONIC PARTS HITACHI CHEMICAL DUPONT MICROSYSTEMS, LTD (JP) 2010-06-24 US disclosed