SCHEMBL25475413

SCHEMBL25475413

CC(S)C(=O)OC1(c2ccc(F)cc2)CCNCC1

nearest known ligand 0.35

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
OPRM1 P35372 2/20 0.35
DRD2 P14416 5/20 0.34
DRD4 P21917 5/20 0.34
DRD3 P35462 5/20 0.34
MAPT P10636 2/20 0.34
GAA P10253 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
ALDH1A1 P00352 1/20 0.33
CYP1A2 P05177 1/20 0.33
CYP3A4 P08684 1/20 0.33
CYP2C19 P33261 1/20 0.33
AKT1 P31749 1/20 0.32
HSD11B1 P28845 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25475412 0.88 OPRM1 (0.38) OPRM1DRD2DRD4DRD3MAPT
SCHEMBL25475408 0.86 DRD2 (0.45) OPRM1DRD2DRD4DRD3MAPT
SCHEMBL25475405 0.86 MME (0.38) OPRM1AKT1
SCHEMBL23870808 0.86 OPRM1 (0.35) OPRM1DRD2DRD4DRD3MAPT
SCHEMBL25475417 0.86 OPRM1 (0.48) OPRM1DRD3
SCHEMBL25475410 0.86 MMP2 (0.38) OPRM1
SCHEMBL25475407 0.85 ALDH1A1 (0.38) OPRM1ALDH1A1CYP3A4CYP2C19
SCHEMBL25475402 0.85 MAPT (0.33) OPRM1DRD2DRD4DRD3MAPT
SCHEMBL26785474 0.83 MMP3 (0.36) OPRM1DRD2DRD4DRD3HSD11B1
SCHEMBL25475411 0.82 NPSR1 (0.38) MAPTALDH1A1CYP1A2CYP3A4CYP2C19

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230161255-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 US disclosed
US-20230161255-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 US disclosed
US-20230161252-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 US disclosed
US-20230161252-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 US disclosed