SCHEMBL25527993

SCHEMBL25527993

BCc1ccc(C(=O)OCCS(=O)(=O)O)c(OC(=O)C2CCCC2)c1

nearest known ligand 0.34

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
▸ HPGD P15428 9/20 0.34
▸ ALDH1A1 P00352 1/20 0.34
▸ ESR1 P03372 1/20 0.33
▸ ESR2 Q92731 1/20 0.33
▸ KMT2A Q03164 3/20 0.33
▸ TDP1 Q9NUW8 2/20 0.33
▸ HTT P42858 1/20 0.33
▸ SMN1; SMN2 Q16637 1/20 0.33
▸ POLB P06746 2/20 0.32
▸ CA2 P00918 1/20 0.32
▸ MEN1 O00255 2/20 0.31
▸ MAPT P10636 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25527996 0.99 HPGD (0.35) HPGDALDH1A1ESR1ESR2KMT2A
SCHEMBL25476243 0.85 ALDH1A1 (0.38) HPGDALDH1A1ESR1ESR2KMT2A
SCHEMBL19756100 0.85 ALDH1A1 (0.35) HPGDALDH1A1ESR1ESR2KMT2A
SCHEMBL19756074 0.84 ALDH1A1 (0.36) HPGDALDH1A1ESR1ESR2KMT2A
SCHEMBL25476244 0.84 ALDH1A1 (0.39) HPGDALDH1A1ESR1ESR2KMT2A
SCHEMBL25528027 0.82 KDM4E (0.30) —
SCHEMBL25527981 0.82 PTGS2 (0.38) HPGDALDH1A1KMT2AMAPT
SCHEMBL25527986 0.80 ALOX15 (0.43) —
SCHEMBL25528002 0.80 ESR1 (0.43) ALDH1A1ESR1ESR2KMT2ATDP1
SCHEMBL25527966 0.80 GAA (0.32) —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11914291-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-27 — — US disclosed
US-11914294-B2 Positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-27 — — US disclosed
US-20240027902-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 — — US disclosed
US-20240027909-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 — — US disclosed
US-20240027903-A1 Resist Material And Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 — — US disclosed
US-11860540-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-02 — — US disclosed
US-20230400766-A1 ONIUM SALT, RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-14 — — US disclosed
US-11835860-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-05 — — US disclosed
US-11835859-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-05 — — US disclosed
US-11829067-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-28 — — US disclosed
US-11720021-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-08-08 — — US disclosed
US-11720020-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-08-08 — — US disclosed
US-11720018-B2 Chemically amplified resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-08-08 — — US disclosed
US-20230236503-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-07-27 — — US disclosed
US-11709427-B2 Positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-07-25 — — US disclosed
US-11703760-B2 Fluorocarboxylic acid-containing monomer, fluorocarboxylic acid-containing polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-07-18 — — US disclosed
US-20230161252-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 — — US disclosed
US-20230152698-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-18 — — US disclosed
US-20230152696-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-18 — — US disclosed
US-20230129578-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-04-27 — — US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11709427-B2 Positive resist composition and pattern forming process EWSR1, PARG, VIM HPGD 4024/4885ALDH1A1 3639/4885ESR1 653/4885
US-20240027903-A1 Resist Material And Patterning Process LBR, HNRNPU, EWSR1 HPGD 4006/4885ALDH1A1 4741/4885ESR1 1070/4885
US-11703760-B2 Fluorocarboxylic acid-containing monomer, fluorocarboxylic acid-containing polymer, resist composition and patterning process NAF1, PFN1, COL1A1 HPGD 4066/4885ALDH1A1 640/4885ESR1 2778/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

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