SCHEMBL25564150

SCHEMBL25564150

CC(=O)OC1(c2cc(C(F)(F)F)cc(C(F)(F)F)c2)CCCC1

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CCR2 P41597 2/20 0.38
CES2 O00748 1/20 0.38
USP2 O75604 4/20 0.37
CYP2C19 P33261 2/20 0.37
CYP1A2 P05177 1/20 0.37
HIF1A Q16665 1/20 0.37
HPGD P15428 1/20 0.36
CYP3A4 P08684 5/20 0.36
TSHR P16473 4/20 0.36
CYP2D6 P10635 3/20 0.36
TACR1 P25103 2/20 0.36
HDAC3 O15379 1/20 0.36
HDAC1 Q13547 1/20 0.36
HDAC2 Q92769 1/20 0.36
HDAC6 Q9UBN7 1/20 0.36
AKR1C3 P42330 1/20 0.35
AKR1C2 P52895 1/20 0.35
AKR1C1 Q04828 1/20 0.35
CYP2C9 P11712 1/20 0.35
MAPT P10636 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25564255 0.98 CCR2 (0.37) CCR2CES2USP2CYP2C19CYP1A2
SCHEMBL25564143 0.85 CCR2 (0.49) CCR2CES2HDAC3HDAC1HDAC2
SCHEMBL25564144 0.84 SLC6A3 (0.43) CES2USP2CYP2C19HPGDALDH1A1
SCHEMBL25564243 0.84 SLC6A4 (0.50) CCR2HPGDMAPT
SCHEMBL25564245 0.83 SLC6A3 (0.46) CES2HPGDTSHR
SCHEMBL25564153 0.79 SLC6A4 (0.37) CYP2C19CYP3A4HDAC3HDAC1HDAC2
SCHEMBL25564135 0.79 DRD2 (0.37) CES2TSHRHDAC3HDAC1HDAC2
SCHEMBL25564311 0.78 HDAC3 (0.37) CES2HDAC3HDAC1HDAC2HDAC6
SCHEMBL25564232 0.78 HDAC3 (0.37) CES2HDAC3HDAC1HDAC2HDAC6
SCHEMBL25564314 0.78 HDAC3 (0.37) CES2HDAC3HDAC1HDAC2HDAC6

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230367213-A1 MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-16 US disclosed
US-20230367213-A1 MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-16 US disclosed
US-20230194986-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-06-22 US disclosed
US-20230194986-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-06-22 US disclosed
US-20230161254-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 US disclosed