SCHEMBL25658016

SCHEMBL25658016

COc1c(C)cc([SH]2CCCCC2)cc1C

nearest known ligand 0.34

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.33
ACHE P22303 1/20 0.31
PKM P14618 1/20 0.31
MEN1 O00255 1/20 0.30
KMT2A Q03164 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25819629 0.98 ALDH1A1 (0.33) ALDH1A1ACHEPKM
SCHEMBL27893504 0.75 ACHE (0.44) ALDH1A1ACHEMEN1KMT2A
SCHEMBL27436497 0.73 THRB (0.38) ALDH1A1
SCHEMBL29039139 0.72 CA1 (0.44) ALDH1A1ACHEMEN1KMT2A
SCHEMBL26156858 0.72 POLB (0.30)
Hydrochloric Acid SCHEMBL2354934 0.67 ALDH1A1 (0.37) ALDH1A1ACHE
SCHEMBL28150786 0.67 ESR1 (0.44) ALDH1A1PKM
SCHEMBL6966078 0.65 CNR1 (0.35) ALDH1A1ACHE
SCHEMBL10030804 0.65 ACHE (0.43) ALDH1A1ACHE
SCHEMBL129762 0.65 ACHE (0.57) ALDH1A1ACHEMEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2024135498-A1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, AND COMPOUND 東京応化工業株式会社 2024-06-27 WO disclosed
WO-2024127977-A1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND ACID DIFFUSION CONTROL AGENT 東京応化工業株式会社 2024-06-20 WO disclosed
WO-2024122425-A1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND ACID DIFFUSION CONTROL AGENT 東京応化工業株式会社 2024-06-13 WO disclosed
US-11874601-B2 Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent TOKYO OHKA KOGYO CO., LTD. (JP) 2024-01-16 US disclosed
US-11835857-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-12-05 US disclosed
US-11829068-B2 Resist composition, method of forming resist pattern, compound, and resin TOKYO OHKA KOGYO CO., LTD. (JP) 2023-11-28 US disclosed
US-11822240-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-11-21 US disclosed
WO-2023210520-A1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, AND COMPOUND 東京応化工業株式会社 2023-11-02 WO disclosed
WO-2023195407-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN 東京応化工業株式会社 2023-10-12 WO disclosed
US-11780946-B2 Alternating copolymer, method of producing alternating copolymer, method of producing polymeric compound, and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-10-10 US disclosed
US-11709425-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-25 US disclosed
US-11703757-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-18 US disclosed
US-11703756-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-18 US disclosed
US-11693313-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-04 US disclosed
US-11693316-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-04 US disclosed
US-20230205084-A1 RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2023-06-29 US disclosed
US-11656549-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-05-23 US disclosed
US-11650497-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-05-16 US disclosed
US-11644751-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-05-09 US disclosed
US-20230127914-A1 RESIST PATTERN FORMATION METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2023-04-27 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11709425-B2 Resist composition and method of forming resist pattern RER1, RRS1, RXFP4 ALDH1A1 3475/4885ACHE 4805/4885PKM 4265/4885
US-11693313-B2 Resist composition and method of forming resist pattern C1R, C1S, C9 ALDH1A1 1921/4885ACHE 4679/4885PKM 3666/4885
US-11874601-B2 Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent MRPS23, MRPS22, SLC11A2 ALDH1A1 2173/4885ACHE 4699/4885PKM 2478/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.