SCHEMBL2602902

SCHEMBL2602902

CC1(OC(=O)COC(=O)C(F)(F)SOOO)C2CC3CC(C2)CC1C3

nearest known ligand 0.37

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
CYP17A1 P05093 2/20 0.37
CYP19A1 P11511 2/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14009375 0.90 CYP17A1 (0.38) CYP17A1CYP19A1
SCHEMBL2602886 0.88 CYP17A1 (0.35) CYP17A1CYP19A1
SCHEMBL13100741 0.88 CYP17A1 (0.35) CYP17A1CYP19A1
SCHEMBL2602885 0.88 CYP17A1 (0.35) CYP17A1CYP19A1
SCHEMBL12854561 0.88
SCHEMBL4403947 0.87
SCHEMBL13100740 0.86 CYP17A1 (0.34) CYP17A1CYP19A1
SCHEMBL2602950 0.86 CYP17A1 (0.41) CYP17A1CYP19A1
SCHEMBL13173204 0.86 ALDH1A1 (0.34) CYP17A1CYP19A1
SCHEMBL13100742 0.85 CYP17A1 (0.34) CYP17A1CYP19A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 54 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230266666-A1 SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-08-24 US disclosed
US-9128373-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-09-08 US disclosed
US-9051405-B2 Resin and resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-06-09 US disclosed
US-8889333-B2 Salt, photoresist composition, and method for producing photoresist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2014-11-18 US disclosed
US-8354217-B2 Salt and photoresist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-01-15 US disclosed
US-8298746-B2 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-10-30 US disclosed
US-20120264060-A1 SALT, PHOTORESIST COMPOSITION, AND METHOD FOR PRODUCING PHOTORESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-10-18 US disclosed
US-20120258405-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-10-11 US disclosed
US-8278023-B2 Salt and photoresist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-10-02 US disclosed
US-8232039-B2 Polymer and resist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-07-31 US disclosed
US-7566522-B2 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-07-28 US disclosed
US-20080274426-A1 Using acrylic ester and sulfonium said salt; high resolution semiconductors; microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-11-06 US disclosed
US-7439006-B2 Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-10-21 US disclosed
US-20080248423-A1 Lithography; semiconductor microfabrication SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-10-09 US disclosed
US-20080220369-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-09-11 US disclosed
US-20080213695-A1 Lithography; semiconductor microfabrication SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-09-04 US disclosed
US-20080193874-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-08-14 US disclosed
US-20080176168-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-07-24 US disclosed
US-20080166660-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-07-10 US disclosed
US-20080076063-A1 Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-03-27 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120264060-A1 SALT, PHOTORESIST COMPOSITION, AND METHOD FOR PRODUCING PHOTORESIST PATTERN C1S, C1R, CLIC1 CYP17A1 2187/4885CYP19A1 2480/4885
US-20080076063-A1 Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same SLC26A3, HCN3, NHERF1 CYP17A1 326/4885CYP19A1 520/4885
US-20230266666-A1 SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN H1-0, H1-4, CHRM1 CYP17A1 2794/4885CYP19A1 3202/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.