SCHEMBL2611522

SCHEMBL2611522

C=C(C)C(=O)OCC(=O)OCC(F)(F)C(F)(F)C(F)(F)F

nearest known ligand 0.37

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.37
THRB P10828 1/20 0.35
ALDH1A1 P00352 2/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2610391 0.90 TSHR (0.39) TSHRTHRBALDH1A1
SCHEMBL36121 0.88 TSHR (0.42) TSHRTHRBALDH1A1
SCHEMBL31757143 0.86 TSHR (0.41) TSHRTHRBALDH1A1
SCHEMBL3082230 0.85 TSHR (0.37) TSHRTHRBALDH1A1
SCHEMBL17735895 0.85 ALDH1A1 (0.31) ALDH1A1
SCHEMBL17603228 0.85 TSHR (0.40) TSHRTHRBALDH1A1
SCHEMBL10226360 0.84 THRB (0.40) TSHRTHRBALDH1A1
SCHEMBL16449154 0.84 TSHR (0.37) TSHRTHRBALDH1A1
SCHEMBL1537007 0.83 TSHR (0.41) TSHRTHRBALDH1A1
SCHEMBL800122 0.83 TSHR (0.41) TSHRTHRBALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9563124-B2 Photoresist composition and method for producing photoresist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-02-07 US disclosed
EP-2088466-B1 Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound TOKYO OHKA KOGYO CO LTD (JP) 2016-10-26 EP disclosed
US-8742038-B2 Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound TOKYO OHKA KOGYO CO., LTD. (JP) 2014-06-03 US disclosed
US-8742038-B2 Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound TOKYO OHKA KOGYO CO., LTD. (JP) 2014-06-03 US disclosed
US-8642244-B2 Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound TOKYO OHKA KOGYO CO., LTD. (JP) 2014-02-04 US disclosed
US-20140030654-A1 PHOTORESIST COMPOSITION AND METHOD FOR PRODUCING PHOTORESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2014-01-30 US disclosed
US-8501387-B2 2013-08-06 US disclosed
US-8475997-B2 Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2013-07-02 US disclosed
US-8221956-B2 Resist composition for immersion exposure, method of forming resist pattern, and flourine-containing polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2012-07-17 US disclosed
US-20120094236-A1 RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING POLYMERIC COMPOUND SHIONO DAIJU (JP) 2012-04-19 US disclosed
US-20120077125-A1 RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2012-03-29 US disclosed
US-20090317743-A1 Resist composition for immersion exposure, method of forming resist pattern, and flourine-containing polymeric compound TOKYO OHKA KOGYO CO., LTD. 2009-12-24 US disclosed
EP-2088466-A1 Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound Tokyo Ohka Kogyo Co., Ltd. (JP) 2009-08-12 EP disclosed
US-20090197204-A1 RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2009-08-06 US disclosed
US-20090197204-A1 RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2009-08-06 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20090197204-A1 RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING COMPOUND RER1, FRG1, AFF1 TSHR 2238/4885THRB 2484/4885ALDH1A1 2326/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.