SCHEMBL26426983

SCHEMBL26426983

O=C(OC1CC2CC1CC2C(=O)OC1(c2ccccc2)CCNCC1)c1cc(I)cc(I)c1O

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL26426950 0.92 — —
SCHEMBL26426988 0.83 — —
SCHEMBL26426913 0.82 OPRM1 (0.36) —
SCHEMBL26426973 0.81 OPRM1 (0.32) —
SCHEMBL26426914 0.78 OPRM1 (0.34) —
SCHEMBL26426916 0.76 OPRM1 (0.33) —
SCHEMBL26426918 0.76 HTR2A (0.35) —
SCHEMBL26426964 0.76 OPRM1 (0.37) —
SCHEMBL26426932 0.74 TTR (0.31) —
SCHEMBL26426978 0.74 KMT2A (0.34) —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11835859-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-05 — — US disclosed
US-20230129578-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-04-27 — — US disclosed
US-20230129578-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-04-27 — — US disclosed
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