SCHEMBL271795

SCHEMBL271795

CC(C)c1ccccc1[SiH](O)O

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
GABRA1 P14867 4/20 0.50
GABRB2 P47870 2/20 0.50
GABRG2 P18507 2/20 0.46
GABRB3 P28472 2/20 0.46
LMNA P02545 2/20 0.46
TSHR P16473 2/20 0.46
FAAH O00519 2/20 0.46
CYP3A4 P08684 2/20 0.46
GABRB1 P18505 2/20 0.46
CA1 P00915 1/20 0.46
CA2 P00918 1/20 0.46
CYP1A2 P05177 1/20 0.46
HPGD P15428 1/20 0.46
PTGS1 P23219 1/20 0.46
SLC6A2 P23975 1/20 0.46
HTR2C P28335 1/20 0.46
GABRA5 P31644 1/20 0.46
GABRA3 P34903 1/20 0.46
HTR2B P41595 1/20 0.46
GABRA2 P47869 1/20 0.46

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2194679 0.79 GABRA1 (0.43) GABRA1GABRB2GABRG2GABRB3LMNA
SCHEMBL2099008 0.76 GABRA1 (0.44) GABRA1GABRB2GABRG2GABRB3LMNA
SCHEMBL28741038 0.74 GABRA1 (0.43) GABRA1GABRB2GABRG2GABRB3LMNA
Hydrogen Peroxide SCHEMBL30120583 0.73 GABRA1 (0.65) GABRA1GABRB2GABRG2GABRB3LMNA
Hydrogen Peroxide SCHEMBL20593356 0.73 GABRA1 (0.65) GABRA1GABRB2GABRG2GABRB3LMNA
Hydrogen Peroxide SCHEMBL29394264 0.73 GABRA1 (0.65) GABRA1GABRB2GABRG2GABRB3LMNA
Methyl Alcohol SCHEMBL10709170 0.73 GABRA1 (0.65) GABRA1GABRB2GABRG2GABRB3LMNA
Hydrogen Peroxide SCHEMBL35519 0.73 GABRA1 (0.65) GABRA1GABRB2GABRG2GABRB3LMNA
Hydrogen Peroxide SCHEMBL99126 0.73 GABRA1 (0.65) GABRA1GABRB2GABRG2GABRB3LMNA
SCHEMBL5002926 0.73 GABRA1 (0.41) GABRA1GABRB2GABRG2GABRB3LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 116 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2026100338-A1 PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR PRODUCING CURED RELIEF PATTERN 旭化成株式会社 2026-05-15 WO disclosed
US-12613465-B2 Photosensitive resin composition and method for producing cured relief pattern ASAHI KASEI KABUSHIKI KAISHA (JP) 2026-04-28 US disclosed
US-12601970-B2 Photosensitive resin composition, method for manufacturing patterned cured product, cured product, interlayer insulating film, cover coat layer, surface protective film, and electronic component HD MICROSYSTEMS, LTD. (JP) 2026-04-14 US disclosed
US-20260099093-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING CURED RELIEF PATTERN USING SAME, AND METHOD FOR PRODUCING POLYIMIDE FILM USING SAME ASAHI KASEI KABUSHIKI KAISHA (JP) 2026-04-09 US disclosed
US-12504688-B2 Negative photosensitive resin composition and method for manufacturing cured relief pattern ASAHI KASEI KABUSHIKI KAISHA (JP) 2025-12-23 US disclosed
US-20250370339-A1 NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR MANUFACTURING CURED RELIEF PATTERN ASAHI KASEI KABUSHIKI KAISHA (JP) 2025-12-04 US disclosed
US-20250362601-A1 Photosensitive Resin Composition, Method Of Manufacturing Pattern Cured Film, Cured Film, Interlayer Insulating Film, Cover Coat Layer, Surface Protective Film, And Electronic Component HD MICROSYSTEMS LTD (JP) 2025-11-27 US disclosed
US-20250341778-A1 NEGATIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR PRODUCING POLYIMIDE AND CURED RELIEF PATTERN USING SAME ASAHI KASEI KABUSHIKI KAISHA (JP) 2025-11-06 US disclosed
US-12405198-B2 Photosensitive resin composition, method for selecting photosensitive resin composition, method for producing patterned cured film, and method for producing semiconductor device RESONAC CORPORATION (JP) 2025-09-02 US disclosed
US-12386259-B2 Negative-type photosensitive resin composition and method for producing polyimide and cured relief pattern using same ASAHI KASEI KABUSHIKI KAISHA (JP) 2025-08-12 US disclosed
US-20100159217-A1 NEGATIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERNS, AND ELECTRONIC PARTS HITACHI CHEMICAL DUPONT MICROSYSTEMS, LTD (JP) 2010-06-24 US disclosed
US-20100092879-A1 PHOTOSENSITIVE RESIN COMPOSITION, PROCESS FOR PRODUCING PATTERNED HARDENED FILM WITH USE THEREOF AND ELECTRONIC PART HITACHI CHEMICAL DUPONT MICROSYSTEMS, LTD. (JP) 2010-04-15 US disclosed
US-7638254-B2 Positive photosensitive resin composition, method for forming pattern, and electronic part HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD (JP) 2009-12-29 US disclosed
EP-2133743-A1 PHOTOSENSITIVE RESIN COMPOSITION, PROCESS FOR PRODUCING PATTERNED HARDENED FILM WITH USE THEREOF AND ELECTRONIC PART Hitachi Chemical DuPont Microsystems, Ltd. (JP) 2009-12-16 EP disclosed
US-20090181224-A1 NEGATIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD AND ELECTRONIC PARTS HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD. (JP) 2009-07-16 US disclosed
US-20090011364-A1 POSITIVE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, AND ELECTRONIC PART HATTORI TAKASHI 2009-01-08 US disclosed
US-7435525-B2 Positive photosensitive resin composition, method for forming pattern, and electronic part HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD. (JP) 2008-10-14 US disclosed
US-20080076849-A1 POLYBENZOXAZOLE PRECURSOR, PHOTOSENSITIVE RESIN COMPOSITION USING THE SAME, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2008-03-27 US disclosed
US-20070122733-A1 Positive photosensitive resin composition, method for forming pattern, and electronic part HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD. (JP) 2007-05-31 US disclosed
EP-1744213-A1 POSITIVE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, AND ELECTRONIC COMPONENT Hitachi Chemical DuPont Microsystems Ltd. (JP) 2007-01-17 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12613465-B2 Photosensitive resin composition and method for producing cured relief pattern ARCN1, GLRA1, PSMA1 GABRA1 186/4885GABRB2 311/4885GABRG2 147/4885
US-12601970-B2 Photosensitive resin composition, method for manufacturing patterned cured product, cured product, interlayer insulating film, cover coat layer, surface protective film, and electronic component ARCN1, P4HA1, COL1A1 GABRA1 892/4885GABRB2 1014/4885GABRG2 1445/4885
US-20260099093-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING CURED RELIEF PATTERN USING SAME, AND METHOD FOR PRODUCING POLYIMIDE FILM USING SAME CD79B, ITGA1, PTK2 GABRA1 66/4885GABRB2 170/4885GABRG2 396/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.