Predicted protein targets (top 17)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | NUDT1 | P36639 | 1/20 | 0.40 |
| ▸ | BACE1 | P56817 | 1/20 | 0.40 |
| ▸ | HSP90AA1 | P07900 | 1/20 | 0.40 |
| ▸ | APP | P05067 | 2/20 | 0.39 |
| ▸ | GAA | P10253 | 1/20 | 0.37 |
| ▸ | QDPR | P09417 | 2/20 | 0.35 |
| ▸ | PSMB5 | P28074 | 1/20 | 0.34 |
| ▸ | PTGS2 | P35354 | 2/20 | 0.34 |
| ▸ | JAK3 | P52333 | 1/20 | 0.33 |
| ▸ | ACMSD | Q8TDX5 | 1/20 | 0.33 |
| ▸ | CAMKK1 | Q8N5S9 | 1/20 | 0.33 |
| ▸ | CAMKK2 | Q96RR4 | 1/20 | 0.33 |
| ▸ | S1PR1 | P21453 | 1/20 | 0.33 |
| ▸ | HDAC1 | Q13547 | 1/20 | 0.33 |
| ▸ | HDAC2 | Q92769 | 1/20 | 0.33 |
| ▸ | MAPT | P10636 | 1/20 | 0.33 |
| ▸ | SNCA | P37840 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Ethane SCHEMBL27596791 | 0.90 | APP (0.40) | NUDT1BACE1HSP90AA1APPPSMB5 | |
| SCHEMBL16581383 | 0.85 | PTPN5 (0.41) | NUDT1BACE1HSP90AA1GAAPTGS2 | |
| SCHEMBL15511757 | 0.84 | TRPA1 (0.47) | NUDT1BACE1HSP90AA1GAAQDPR | |
| SCHEMBL3816966 | 0.84 | ESR2 (0.39) | NUDT1BACE1HSP90AA1GAAPTGS2 | |
| Ethane SCHEMBL28160570 | 0.83 | HSD17B1 (0.41) | NUDT1BACE1HSP90AA1GAA | |
| Ethane SCHEMBL27615405 | 0.81 | NUDT1 (0.46) | NUDT1BACE1HSP90AA1APPQDPR | |
| SCHEMBL18948598 | 0.80 | NUDT1 (0.42) | NUDT1BACE1HSP90AA1PSMB5PTGS2 | |
| SCHEMBL3787886 | 0.78 | NUDT1 (0.44) | NUDT1BACE1HSP90AA1PSMB5ACMSD | |
| Ethane SCHEMBL28262859 | 0.78 | NUDT1 (0.39) | NUDT1BACE1HSP90AA1GAAPSMB5 | |
| SCHEMBL27936315 | 0.77 | NUDT1 (0.43) | NUDT1BACE1HSP90AA1ACMSDCAMKK2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 69 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-1278185-C | Positive photoresist composition and method for forming etch resistant pattern | TOKYO APPLIED CHEMICAL INDUSTR (JP) | 2006-10-04 | — | — | CN | claimed |
| CN-1469199-A | Positive photoresist composition and method for forming etch resistant pattern | 东京应化工业株式会社 | 2004-01-21 | — | — | CN | claimed |
| CN-107561863-A | Positive photosensitive resin composition and application thereof | 奇美实业股份有限公司 | 2018-01-09 | — | — | CN | disclosed |
| CN-107179652-A | Positive photosensitive polysiloxane composition and application thereof | 奇美实业股份有限公司 | 2017-09-19 | — | — | CN | disclosed |
| CN-103885294-B | Photosensitive polysiloxane composition, protective film and element with protective film | 奇美实业股份有限公司 | 2017-07-14 | — | — | CN | disclosed |
| CN-106918989-A | Photosensitive polysiloxane composition, protective film and module with protective film | 奇美实业股份有限公司 | 2017-07-04 | — | — | CN | disclosed |
| CN-106909028-A | Photosensitive resin composition, protective film and liquid crystal display element | 奇美实业股份有限公司 | 2017-06-30 | — | — | CN | disclosed |
| CN-106444289-A | UV irradiation apparatus, resist pattern forming apparatus, UV irradiation method, and resist pattern forming method | 东京应化工业株式会社 | 2017-02-22 | — | — | CN | disclosed |
| CN-105717745-A | Photosensitive polysiloxane composition, protective film and element with protective film | 奇美实业股份有限公司 | 2016-06-29 | — | — | CN | disclosed |
| CN-105676601-A | Pretreatment method of glass substrate used for forming etching mask | 东京应化工业株式会社 | 2016-06-15 | — | — | CN | disclosed |
| CN-103376661-B | Photocurable polysiloxane composition, protective film and element having protective film | CHI MEI CORP. (CN) | 2016-05-18 | — | — | CN | disclosed |
| CN-1235090-C | Positive photoresist composition and method for forming resist pattern | TOKYO APPLIED CHEMICAL INDUSTR (JP) | 2006-01-04 | — | — | CN | disclosed |
| CN-1609708-A | Positive type photoresist composition for manufacturing system LCD, and method for forming resist pattern | TOKYO OHKA KOGYO CO LTD (JP) | 2005-04-27 | — | — | CN | disclosed |
| CN-1573544-A | Plus photoresist composition for manufacturing system LCD and method for making resist pattern | TOKYO OHKA KOGYO CO LTD (JP) | 2005-02-02 | — | — | CN | disclosed |
| CN-1550898-A | Positive anticorrosive additive composition and anticorrosive pattern forming method | 东京应化工业株式会社 | 2004-12-01 | — | — | CN | disclosed |
| CN-1550899-A | Positive photoresist composition for discharge nozzle type coating process and anticorrosive pattern forming method | 东京应化工业株式会社 | 2004-12-01 | — | — | CN | disclosed |
| CN-1484095-A | Positive photoresist composition and method for forming slushing pattern | 东京应化工业株式会社 | 2004-03-24 | — | — | CN | disclosed |
| CN-1469199-A | Positive photoresist composition and method for forming etch resistant pattern | 东京应化工业株式会社 | 2004-01-21 | — | — | CN | disclosed |
| CN-1469197-A | Positive photoresist composition and method for forming resist pattern | 东京应化工业株式会社 | 2004-01-21 | — | — | CN | disclosed |
| CN-1453639-A | Novolac resin solution photoresist composition and its preparing method | TOKYO IND CO LTD (JP) | 2003-11-05 | — | — | CN | disclosed |