SCHEMBL2754947

SCHEMBL2754947

CC(=O)c1cc(C(C)=O)cc(C(C)(c2cc(C)c(O)c(C)c2)c2cc(C)c(O)c(C)c2)c1

nearest known ligand 0.43

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
▸ CA5A P35218 1/20 0.43
▸ LMNA P02545 1/20 0.41
▸ ESR1 P03372 3/20 0.39
▸ ESR2 Q92731 2/20 0.39
▸ KMT2A Q03164 4/20 0.38
▸ MEN1 O00255 3/20 0.38
▸ ALDH1A1 P00352 2/20 0.38
▸ MAPT P10636 2/20 0.38
▸ CA1 P00915 1/20 0.38
▸ CA2 P00918 1/20 0.38
▸ CYP1A2 P05177 2/20 0.36
▸ CYP2C9 P11712 2/20 0.36
▸ CYP3A4 P08684 2/20 0.36
▸ CYP2D6 P10635 1/20 0.36
▸ CYP2B6 P20813 1/20 0.36
▸ HSD17B1 P14061 1/20 0.35
▸ CYP2C19 P33261 1/20 0.34
▸ CYTH2 Q99418 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2754944 0.96 CA5A (0.43) CA5ALMNAESR1ESR2KMT2A
SCHEMBL22328762 0.87 CA5A (0.36) CA5ALMNAESR1ESR2KMT2A
SCHEMBL19847779 0.86 ALOX5 (0.42) LMNAESR1ESR2KMT2AMEN1
SCHEMBL1644952 0.81 CA5A (0.56) CA5ALMNAESR1ESR2KMT2A
SCHEMBL455094 0.81 CA2 (0.55) LMNAESR1ESR2KMT2AMEN1
SCHEMBL14707716 0.81 ESR1 (0.39) ESR1ESR2KMT2AMEN1ALDH1A1
SCHEMBL19842298 0.80 ESR1 (0.34) CA5ALMNAESR1ESR2KMT2A
SCHEMBL19884613 0.80 ESR1 (0.38) CA5ALMNAESR1ESR2KMT2A
SCHEMBL19842187 0.79 ESR1 (0.52) CA5ALMNAESR1ESR2KMT2A
SCHEMBL8407830 0.79 CA2 (0.52) LMNAESR1ESR2KMT2AMEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 84 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11852970-B2 Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-12-26 — — US disclosed
US-20180107113-A1 RESIST BASE MATERIAL, RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-04-19 — — US disclosed
US-20180081270-A1 RADIATION-SENSITIVE COMPOSITION, AMORPHOUS FILM, AND METHOD FOR FORMING RESIST PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-03-22 — — US disclosed
US-20180074402-A1 RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYPHENOL COMPOUND USED THEREIN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-03-15 — — US disclosed
US-20180074404-A1 RADIATION-SENSITIVE COMPOSITION AND METHOD FOR FORMING RESIST PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-03-15 — — US disclosed
US-9908831-B2 Resist composition, method for forming resist pattern, polyphenolic compound for use in the composition, and alcoholic compound that can be derived therefrom MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-03-06 — — US disclosed
US-9897913-B2 Radiation-sensitive composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-02-20 — — US disclosed
US-9897922-B2 Method of forming pattern and developer for use in the method FUJIFILM CORPORATION (JP) 2018-02-20 — — US disclosed
US-9785048-B2 Resist composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2017-10-10 — — US disclosed
US-9746769-B2 — — 2017-08-29 — — US disclosed
US-20120028196-A1 METHOD OF FORMING PATTERN AND ORGANIC PROCESSING LIQUID FOR USE IN THE METHOD FUJIFILM CORPORATION (JP) 2012-02-02 — — US disclosed
US-20120003591-A1 METHOD OF FORMING PATTERN AND DEVELOPER FOR USE IN THE METHOD FUJIFILM CORPORATION (JP) 2012-01-05 — — US disclosed
US-20110287234-A1 NEGATIVE RESIST PATTERN FORMING METHOD, DEVELOPER AND NEGATIVE CHEMICAL-AMPLIFICATION RESIST COMPOSITION USED THEREFOR, AND RESIST PATTERN FUJIFILM CORPORATION (JP) 2011-11-24 — — US disclosed
US-7871751-B2 Resist composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2011-01-18 — — US disclosed
US-20100047709-A1 RADIATION-SENSITIVE COMPOSITION MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2010-02-25 — — US disclosed
US-7521168-B2 Compound that has a reduction potential higher than that of diphenyl iodonium salt and generates an acid upon irradiation of an actinic ray or radiation. FUJIFILM CORPORATION (JP) 2009-04-21 — — US disclosed
US-7432034-B2 Negative resist composition FUJIFILM CORPORATION (JP) 2008-10-07 — — US disclosed
US-20080241745-A1 Mixture of alkali soluble polymer, crosslinking agent, acid generator ; radiation with actinic radiation; quaternary ammonium compound FUJIFILM CORPORATION (JP) 2008-10-02 — — US disclosed
US-20080153031-A1 Resist composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2008-06-26 — — US disclosed
US-7157205-B2 Intermediate layer composition for multilayer resist process, pattern-forming process using the same, and laminate FUJI PHOTO FILM CO., LTD. (JP) 2007-01-02 — — US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11852970-B2 Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin SLC39A11, CROCC, TERB1 CA5A 4487/4885LMNA 772/4885ESR1 3319/4885
US-20180074402-A1 RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYPHENOL COMPOUND USED THEREIN SLC11A2, ABCC1, FBL CA5A 2575/4885LMNA 3644/4885ESR1 245/4885
US-20100047709-A1 RADIATION-SENSITIVE COMPOSITION C1S, C9, RAD51 CA5A 2967/4885LMNA 286/4885ESR1 194/4885
US-20180107113-A1 RESIST BASE MATERIAL, RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN CROCC, REV1, PARG CA5A 3456/4885LMNA 876/4885ESR1 1004/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

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