SCHEMBL283313

SCHEMBL283313

C=C(C)C(=O)OCCOCOCC

nearest known ligand 0.81

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
THRB P10828 2/20 0.81
TSHR P16473 7/20 0.52
ALDH1A1 P00352 8/20 0.50
POLB P06746 1/20 0.36
APEX1 P27695 1/20 0.36
HTT P42858 1/20 0.36
TDP1 Q9NUW8 1/20 0.36
HSD17B10 Q99714 2/20 0.33
LMNA P02545 1/20 0.33
TP53 P04637 2/20 0.32
HIF1A Q16665 2/20 0.32
MGAM O43451 1/20 0.32
GAA P10253 1/20 0.32
SI P14410 1/20 0.32
MGAM2 Q2M2H8 1/20 0.32
CA1 P00915 1/20 0.32
CA2 P00918 1/20 0.32
EPHX2 P34913 1/20 0.32
GLO1 Q04760 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL36524 0.90 THRB (1.00) THRBTSHRALDH1A1POLBAPEX1
SCHEMBL24512197 0.90 THRB (0.70) THRBTSHRALDH1A1POLBAPEX1
SCHEMBL2120122 0.89 THRB (0.65) THRBTSHRALDH1A1POLBAPEX1
SCHEMBL2120071 0.89 THRB (0.65) THRBTSHRALDH1A1POLBAPEX1
SCHEMBL16504107 0.88 THRB (0.96) THRBTSHRALDH1A1POLBAPEX1
Ether SCHEMBL22660834 0.88 THRB (0.88) THRBTSHRALDH1A1POLBAPEX1
SCHEMBL887753 0.88 THRB (0.96) THRBTSHRALDH1A1POLBAPEX1
SCHEMBL8850982 0.88 THRB (0.96) THRBTSHRALDH1A1POLBAPEX1
SCHEMBL8850621 0.88 THRB (0.96) THRBTSHRALDH1A1POLBAPEX1
SCHEMBL11754913 0.88 THRB (0.96) THRBTSHRALDH1A1POLBAPEX1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10719014-B2 Photoresists comprising amide component ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2020-07-21 US disclosed
US-9541834-B2 Ionic thermal acid generators for low temperature applications ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2017-01-10 US disclosed
US-9298093-B2 Polymers, photoresist compositions and methods of forming photolithographic patterns ROHM AND HAAS ELECTRONIC MATERIALS LLC 2016-03-29 US disclosed
US-20150212414-A1 IONIC THERMAL ACID GENERATORS FOR LOW TEMPERATURE APPLICATIONS ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2015-07-30 US disclosed
US-8975001-B2 Photoresist compositions and methods of forming photolithographic patterns ROHM AND HAAS ELECTRONICS MATERIALS LLC (US) 2015-03-10 US disclosed
US-8790867-B2 Methods of forming photolithographic patterns by negative tone development ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2014-07-29 US disclosed
US-8771917-B2 Monomers, polymers, photoresist compositions and methods of forming photolithographic patterns ROHM AND HAAS ELECTRONICS MATERIALS LLC (US) 2014-07-08 US disclosed
US-20140120469-A1 THERMAL ACID GENERATORS FOR USE IN PHOTORESIST ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2014-05-01 US disclosed
US-20140120470-A1 PHOTORESISTS COMPRISING IONIC COMPOUND ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2014-05-01 US disclosed
US-20130344439-A1 PHOTORESISTS COMPRISING AMIDE COMPONENT U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2013-12-26 US disclosed
EP-2472325-A1 Polymers, photoresist compositions and methods of forming photolithographic patterns Rohm and Haas Electronic Materials LLC (US) 2012-07-04 EP disclosed
EP-2472326-A1 Polymers, photoresist compositions and methods of forming photolithographic patterns Rohm and Haas Electronic Materials LLC (US) 2012-07-04 EP disclosed
EP-2461213-A1 Polymers, photoresist compositions and methods of forming photolithographic patterns Rohm and Haas Electronic Materials LLC (US) 2012-06-06 EP disclosed
US-20120095121-A1 HYDROPHILIC POLYOLEFIN SINTERED BODY ASAHI KASEI CHEMICALS CORPORATION (JP) 2012-04-19 US disclosed
US-20120077120-A1 PHOTORESISTS COMPRISING MULTI-AMIDE COMPONENT ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2012-03-29 US disclosed
US-20120064456-A1 PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS DOW GLOBAL TECHNOLOGIES LLC (US) 2012-03-15 US disclosed
EP-2428843-A1 Photoresist compositions and methods of forming photolithographic patterns Rohm and Haas Electronic Materials LLC (US) 2012-03-14 EP disclosed
EP-2428842-A1 Photoresists comprising multi-amide component Rohm and Haas Electronic Materials LLC (US) 2012-03-14 EP disclosed
EP-2174975-A1 HYDROPHILIC POLYOLEFIN SINTERED BODY Asahi Kasei Chemicals Corporation (JP) 2010-04-14 EP disclosed
US-4631251-A Heat-developable color photo-sensitive material with polymeric coupler KONISHIROKU PHOTO INDUSTRY CO., LTD. (JP) 1986-12-23 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-10719014-B2 Photoresists comprising amide component ASPH, ALAD, SUN2 THRB 4638/4885TSHR 4127/4885ALDH1A1 823/4885
US-20150212414-A1 IONIC THERMAL ACID GENERATORS FOR LOW TEMPERATURE APPLICATIONS TRIM4, TRMT1, TRIM59 THRB 3259/4885TSHR 4541/4885ALDH1A1 1833/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.