SCHEMBL2876554

SCHEMBL2876554

Sc1ccc(Oc2cccs2)cc1

nearest known ligand 0.33

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
APP P05067 1/20 0.33
BACE1 P56817 1/20 0.33
MGMT P16455 1/20 0.33
ALDH1A1 P00352 1/20 0.30
MAPK1 P28482 1/20 0.30
HTT P42858 1/20 0.30
L3MBTL1 Q9Y468 1/20 0.30
MMP1 P03956 1/20 0.30
MMP2 P08253 1/20 0.30
MMP9 P14780 1/20 0.30
MMP12 P39900 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8471918 0.89 MGMT (0.37) APPBACE1MGMTALDH1A1MAPK1
SCHEMBL141870 0.80 LTA4H (0.50) APPBACE1MGMT
SCHEMBL9479303 0.79 GAA (0.47) ALDH1A1MAPK1HTTL3MBTL1
SCHEMBL8124374 0.79 MAOA (0.43) APPBACE1ALDH1A1HTTL3MBTL1
SCHEMBL8130697 0.79 MAPT (0.43) APPBACE1MGMTALDH1A1L3MBTL1
SCHEMBL8125571 0.79 IDO1 (0.44) APPBACE1ALDH1A1MAPK1L3MBTL1
SCHEMBL251357 0.77 MGMT (0.40) MGMTALDH1A1L3MBTL1MMP1MMP2
SCHEMBL7565860 0.75 MGMT (0.33) APPBACE1MGMTMMP1MMP2
SCHEMBL3965732 0.75 ALDH1A1 (0.49) ALDH1A1MAPK1L3MBTL1
SCHEMBL6159361 0.75 TTR (0.36) APPBACE1MGMTALDH1A1MAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 43 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2024085293-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT 영창케미칼 주식회사 2024-04-25 WO claimed
WO-2001070853-A2 METHOD OF PREPARING A POLYMERIZATE PPG INDUSTRIES OHIO, INC. (US) 2001-09-27 WO claimed
WO-2024085293-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT 영창케미칼 주식회사 2024-04-25 WO disclosed
EP-4348352-A1 METHOD FOR USING COMPOSITION COMPRISING ORGANIC ACID COMPOUND, LITHOGRAPHY COMPOSITION COMPRISING ORGANIC ACID COMPOUND, AND METHOD FOR MANUFACTURING RESIST PATTERN Merck Patent GmbH (DE) 2024-04-10 EP disclosed
CN-107615168-B Radiation-sensitive composition 日产化学工业株式会社 2023-12-19 CN disclosed
CN-117008420-A Radiation-sensitive composition 日产化学工业株式会社 2023-11-07 CN disclosed
US-20230314937-A1 METHOD FOR USING COMPOSITION COMPRISING CARBOXYLIC ACID ESTER, LITHOGRAPHY COMPOSITION COMPRISING CARBOXYLIC ACID ESTER, AND METHOD FOR MANUFACTURING RESIST PATTERN MERCK PATENT GMBH (DE) 2023-10-05 US disclosed
EP-4189486-A1 METHOD FOR USING COMPOSITION COMPRISING CARBOXYLIC ACID ESTER, LITHOGRAPHY COMPOSITION COMPRISING CARBOXYLIC ACID ESTER, AND METHOD FOR MANUFACTURING RESIST PATTERN Merck Patent GmbH (DE) 2023-06-07 EP disclosed
CN-109804311-B Chemically amplified positive photoresist composition and pattern forming method using the same 默克专利有限公司 2023-06-06 CN disclosed
CN-115885217-A Negative resist film laminate and pattern forming method 信越化学工业株式会社 2023-03-31 CN disclosed
CN-108107676-B Chemically amplified positive resist film laminate and pattern formation method 信越化学工业株式会社 2023-02-21 CN disclosed
CN-103176353-A Chemically amplified negative resist composition and patterning process SHINETSU CHEMICAL CO 2013-06-26 CN disclosed
EP-2533101-A2 Sulfonium salt, polymer, chemically amplified resist composition using said polymer, and resist patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2012-12-12 EP disclosed
US-20120308932-A1 POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS USING SAID CHEMICALLY AMPLIFIED RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-12-06 US disclosed
US-20120308920-A1 SULFONIUM SALT, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION USING SAID POLYMER, AND RESIST PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-12-06 US disclosed
US-20120214100-A1 RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-23 US disclosed
CN-101982808-A Chemically amplified resist compositon and pattern forming process SHINETSU CHEMICAL CO 2011-03-02 CN disclosed
EP-2146247-A1 Resist patterning process and manufacturing photo mask Shin-Etsu Chemical Co., Ltd. (JP) 2010-01-20 EP disclosed
CN-101387831-A Chemically amplified negative resist composition and pattern forming method SHINETSU CHEMICAL CO (JP) 2009-03-18 CN disclosed
EP-1693707-A1 Positive resist composition, and patterning process using the same Shinetsu Chemical Co., Ltd. (JP) 2006-08-23 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120308920-A1 SULFONIUM SALT, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION USING SAID POLYMER, AND RESIST PATTERNING PROCESS SMCHD1, CD44, SMC1A APP 2653/4885BACE1 4623/4885MGMT 3220/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.