SCHEMBL2895599

SCHEMBL2895599

O=C1C(c2ccccc2)=C(c2ccccc2)C(=O)N1OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F

nearest known ligand 0.36

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
PIK3CD O00329 1/20 0.36
PIK3CA P42336 1/20 0.36
PIK3CB P42338 1/20 0.36
PTGS2 P35354 1/20 0.36
CA1 P00915 13/20 0.36
CA2 P00918 13/20 0.36
KMT2A Q03164 3/20 0.36
KDM4E B2RXH2 1/20 0.36
ALDH1A1 P00352 1/20 0.36
MAPT P10636 1/20 0.36
HPGD P15428 1/20 0.36
MMP1 P03956 3/20 0.34
MMP2 P08253 3/20 0.34
MMP9 P14780 3/20 0.34
MMP8 P22894 3/20 0.34
MMP13 P45452 3/20 0.34
PDE4B Q07343 1/20 0.33
MEN1 O00255 1/20 0.33
PARL Q9H300 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2894844 0.99 CA1 (0.37) PIK3CDPIK3CAPIK3CBPTGS2CA1
SCHEMBL382979 0.85 PTGS2 (0.41) PTGS2KMT2AKDM4EALDH1A1MAPT
SCHEMBL29366293 0.84 KMT2A (0.49) CA1CA2KMT2AKDM4EALDH1A1
SCHEMBL1470558 0.84 KMT2A (0.49) CA1CA2KMT2AKDM4EALDH1A1
SCHEMBL13098336 0.83 PTGS2 (0.35) PTGS2KMT2AKDM4EALDH1A1MAPT
SCHEMBL2904034 0.82 KMT2A (0.48) CA1CA2KMT2AKDM4EALDH1A1
SCHEMBL1419593 0.75 ALDH1A1 (0.53) CA1CA2KMT2AKDM4EALDH1A1
SCHEMBL12039818 0.75 VDR (0.47) PTGS2KMT2AKDM4EALDH1A1MAPT
SCHEMBL28737210 0.75 PTGS2 (0.39) PTGS2KMT2AKDM4EALDH1A1MAPT
SCHEMBL20679637 0.74 ALDH1A1 (0.52) CA1CA2KMT2AKDM4EALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 72 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-122043858-A EUV patterned resist formation method 亚历克斯·P·G·罗宾逊 2026-05-15 CN disclosed
US-11681227-B2 Enhanced EUV photoresist materials, formulations and processes IRRESISTIBLE MATERIALS LTD (GB) 2023-06-20 US disclosed
CN-113994256-A Method for forming EUV patterned resist 亚历克斯·P·G·罗宾逊 2022-01-28 CN disclosed
US-20200272050-A1 Enhanced EUV Photoresist Materials, Formulations and Processes IRRESISTIBLE MATERIALS, LTD (GB) 2020-08-27 US disclosed
CN-110998437-A Multi-trigger photoresist compositions and methods A·P·G·罗宾森 2020-04-10 CN disclosed
US-10095112-B2 Multiple trigger photoresist compositions and methods IRRESISTIBLE MATERIALS LTD (GB) 2018-10-09 US disclosed
US-20180246408-A1 MULTIPLE TRIGGER PHOTORESIST COMPOSITIONS AND METHODS IRRESISTIBLE MATERIALS, LTD (GB) 2018-08-30 US disclosed
US-9519215-B2 Composition of matter and molecular resist made therefrom IRRESISTIBLE MATERIALS, LTD (GB) 2016-12-13 US disclosed
US-9448474-B2 Positive photosensitive resin composition and pattern forming method CHI MEI CORPORATION (TW) 2016-09-20 US disclosed
US-20160246173-A1 Composition of Matter and Molecular Resist Made Therefrom IRRESISTIBLE MATERIALS LTD (GB) 2016-08-25 US disclosed
EP-1193558-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2002-04-03 EP disclosed
US-20020012872-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-01-31 US disclosed
US-6337171-B1 AS A RESIST APPLICABLE TO FAR ULTRAVIOLET RAYS SUCH AS A KRF EXCIMER LASER, CHARGED PARTICLE RAYS SUCH AS ELECTRON BEAMS, AND X-RAYS JSR CORPORATION (JP) 2002-01-08 US disclosed
EP-1164433-A1 Radiation-sensitive resin composition JSR Corporation (JP) 2001-12-19 EP disclosed
US-20010023050-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2001-09-20 US disclosed
EP-1122605-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2001-08-08 EP disclosed
US-6136500-A CONTAINS A PHOTOACID GENERATOR COMPRISING A COMBINATION OF A COMPOUND THAT GENERATES A CARBOXYLIC ACID UPON EXPOSURE TO RADIATION AND ANOTHER COMPOUND THAT GENERATES ANOTHER ACID UPON EXPOSURE TO RADIATION JSR CORPORATION (JP) 2000-10-24 US disclosed
EP-1035436-A1 Resist pattern formation method JSR Corporation (JP) 2000-09-13 EP disclosed
EP-1011029-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2000-06-21 EP disclosed
EP-0898201-A1 Radiation sensitive resin composition JSR Corporation (JP) 1999-02-24 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-10095112-B2 Multiple trigger photoresist compositions and methods ERCC4, ERCC2, APEX1 PIK3CD 3317/4885PIK3CA 2720/4885PIK3CB 2561/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.