SCHEMBL2900930

SCHEMBL2900930

CC(C)(C)Oc1ccc([S+](c2ccccc2)c2ccccc2)cc1.O=S(=O)([O-])c1ccccc1

nearest known ligand 0.37

Known targets — ChEMBL curated mechanism

CHRNA1CHRNB1CHRNDCHRNECHRNG

The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
PPARA Q07869 2/20 0.37
LMNA P02545 3/20 0.34
HTT P42858 3/20 0.34
SMN1; SMN2 Q16637 2/20 0.34
ABCB1 P08183 1/20 0.34
ALDH1A1 P00352 4/20 0.33
MEN1 O00255 2/20 0.33
MAPT P10636 2/20 0.33
KMT2A Q03164 2/20 0.33
SOS1 Q07889 1/20 0.33
GAA P10253 1/20 0.33
KDM4E B2RXH2 1/20 0.33
NPC1 O15118 1/20 0.33
PKM P14618 1/20 0.33
MAPK1 P28482 1/20 0.33
RAB9A P51151 1/20 0.33
MMP2 P08253 1/20 0.32
MMP13 P45452 1/20 0.32
POLB P06746 1/20 0.32
HSD11B1 P28845 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL65269 0.93 HTT (0.44) LMNAHTTSMN1; SMN2ALDH1A1MEN1
SCHEMBL64769 0.93 HTT (0.44) LMNAHTTSMN1; SMN2ALDH1A1MEN1
SCHEMBL8316981 0.91 PPARA (0.33) PPARALMNAHTTSMN1; SMN2ABCB1
SCHEMBL8320141 0.91 PPARA (0.33) PPARALMNAHTTSMN1; SMN2ABCB1
SCHEMBL7741629 0.90 NR3C2 (0.44) LMNAHTTSMN1; SMN2ALDH1A1MEN1
SCHEMBL7733615 0.89 LTA4H (0.40) PPARALMNAHTTSMN1; SMN2ABCB1
SCHEMBL2902275 0.89 AR (0.39) LMNAHTTSMN1; SMN2ALDH1A1MEN1
SCHEMBL7733586 0.89 ACACB (0.34) PPARALMNAHTTSMN1; SMN2ABCB1
SCHEMBL6140643 0.89 ALDH1A1 (0.37) LMNASMN1; SMN2ALDH1A1MEN1MAPT
SCHEMBL7738799 0.89 NR3C2 (0.46) LMNAHTTSMN1; SMN2ALDH1A1MEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 41 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8206888-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2012-06-26 US disclosed
EP-1253470-B1 Radiation-sensitive resin composition JSR CORP (JP) 2010-06-16 EP disclosed
US-20100028800-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-02-04 US disclosed
EP-1238972-B1 Novel carbazole derivative and chemically amplified radiation-sensitive resin composition JSR CORP (JP) 2009-12-16 EP disclosed
EP-1270553-B1 Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition JSR CORP (JP) 2009-11-18 EP disclosed
EP-1640804-B1 Positive-tone radiation-sensitive resin composition JSR CORP (JP) 2008-11-19 EP disclosed
EP-1953593-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2008-08-06 EP disclosed
US-7335457-B2 Positive-tone radiation-sensitive resin composition JSR CORPORATION (JP) 2008-02-26 US disclosed
US-7258962-B2 Positive-tone radiation-sensitive resin composition JSR CORPORATION (JP) 2007-08-21 US disclosed
EP-1011029-B1 Radiation-sensitive resin composition JSR CORP (JP) 2006-08-30 EP disclosed
EP-1253470-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2002-10-30 EP disclosed
EP-1238972-A1 Novel carbazole derivative and chemically amplified radiation-sensitive resin composition JSR Corporation (JP) 2002-09-11 EP disclosed
EP-1231205-A1 VINYLPHENYLPROPIONIC ACID DERIVATIVES, PROCESSES FOR PRODUCTION OF THE DERIVATIVES, POLYMERS THEREOF AND RADIOSENSITIVE RESIN COMPOSITIONS JSR Corporation (JP) 2002-08-14 EP disclosed
US-20020090569-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-07-11 US disclosed
US-6403288-B1 COATING WITH COPOLYMER COMPRISING HYDROXYSTYRENE DERIVATIVE MONOMER HAVING ACID DISSOCIABLE GROUP; EXPOSURE TO RADIATION; DEVELOPMENT JSR CORPORATION (JP) 2002-06-11 US disclosed
US-6337171-B1 AS A RESIST APPLICABLE TO FAR ULTRAVIOLET RAYS SUCH AS A KRF EXCIMER LASER, CHARGED PARTICLE RAYS SUCH AS ELECTRON BEAMS, AND X-RAYS JSR CORPORATION (JP) 2002-01-08 US disclosed
US-6136500-A CONTAINS A PHOTOACID GENERATOR COMPRISING A COMBINATION OF A COMPOUND THAT GENERATES A CARBOXYLIC ACID UPON EXPOSURE TO RADIATION AND ANOTHER COMPOUND THAT GENERATES ANOTHER ACID UPON EXPOSURE TO RADIATION JSR CORPORATION (JP) 2000-10-24 US disclosed
EP-1035436-A1 Resist pattern formation method JSR Corporation (JP) 2000-09-13 EP disclosed
EP-1011029-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2000-06-21 EP disclosed
EP-0898201-A1 Radiation sensitive resin composition JSR Corporation (JP) 1999-02-24 EP disclosed