Known targets — ChEMBL curated mechanism
CHRM1CHRM2CHRM3CHRM4CHRM5SLC6A2dacAdacBdacCftsImrcAmrcBmrdA
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HTT | P42858 | 3/20 | 0.44 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.44 |
| ▸ | LMNA | P02545 | 3/20 | 0.42 |
| ▸ | FFAR1 | O14842 | 1/20 | 0.39 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.38 |
| ▸ | CA12 | O43570 | 3/20 | 0.36 |
| ▸ | CA9 | Q16790 | 3/20 | 0.36 |
| ▸ | CYP3A4 | P08684 | 2/20 | 0.36 |
| ▸ | L3MBTL1 | Q9Y468 | 2/20 | 0.36 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.36 |
| ▸ | ATM | Q13315 | 1/20 | 0.36 |
| ▸ | MEN1 | O00255 | 1/20 | 0.36 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.36 |
| ▸ | BCHE | P06276 | 1/20 | 0.36 |
| ▸ | ACHE | P22303 | 1/20 | 0.36 |
| ▸ | CA1 | P00915 | 1/20 | 0.36 |
| ▸ | CA2 | P00918 | 1/20 | 0.36 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.35 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.35 |
| ▸ | THPO | P40225 | 1/20 | 0.35 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL64769 | 1.00 | HTT (0.44) | HTTSMN1; SMN2LMNAFFAR1ALDH1A1 | |
| SCHEMBL64967 | 0.94 | HTT (0.40) | HTTSMN1; SMN2LMNAALDH1A1CA12 | |
| SCHEMBL2900930 | 0.93 | PPARA (0.37) | HTTSMN1; SMN2LMNAALDH1A1MEN1 | |
| SCHEMBL384726 | 0.93 | ALDH1A1 (0.40) | HTTSMN1; SMN2LMNAALDH1A1CA12 | |
| SCHEMBL5619616 | 0.89 | SMN1; SMN2 (0.42) | HTTSMN1; SMN2LMNAFFAR1ALDH1A1 | |
| SCHEMBL3959379 | 0.89 | SMN1; SMN2 (0.42) | HTTSMN1; SMN2LMNAFFAR1ALDH1A1 | |
| SCHEMBL12228666 | 0.88 | KIF11 (0.36) | HTTSMN1; SMN2LMNAFFAR1CYP3A4 | |
| SCHEMBL6757962 | 0.88 | HTT (0.41) | HTTSMN1; SMN2LMNAFFAR1ALDH1A1 | |
| SCHEMBL8078742 | 0.88 | HTT (0.41) | HTTSMN1; SMN2LMNAFFAR1ALDH1A1 | |
| SCHEMBL8320141 | 0.87 | PPARA (0.33) | HTTSMN1; SMN2LMNAALDH1A1MEN1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 793 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6841334-B2 | Onium salts and positive resist materials using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-01-11 | — | — | US | claimed |
| US-20260146026-A1 | COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT | ADEKA CORPORATION (JP) | 2026-05-28 | — | — | US | disclosed |
| US-20260093178-A1 | POLYMER, METHOD OF PRODUCING THE SAME, RESIST COMPOSITION INCLUDING THE POLYMER, AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-04-02 | — | — | US | disclosed |
| US-12583973-B2 | Polyimide-based polymer, positive photosensitive resin composition, negative photosensitive resin composition, patterning method, method for forming cured film, interlayer insulating film, surface protective film, and electronic component | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-03-24 | — | — | US | disclosed |
| US-20260008932-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-01-08 | — | — | US | disclosed |
| EP-4675357-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-01-07 | — | — | EP | disclosed |
| EP-4664197-A1 | PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING FILM, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-12-17 | — | — | EP | disclosed |
| US-12448485-B2 | Photosensitive resin composition, photosensitive resin coating, photosensitive dry film, pattern formation method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-10-21 | — | — | US | disclosed |
| US-20250298315-A1 | PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-25 | — | — | US | disclosed |
| EP-4617775-A1 | PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN FILM, PHOTOSENSITIVE DRY FILM, PATTERN FORMING METHOD, AND LIGHT-EMITTING ELEMENT | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-17 | — | — | EP | disclosed |
| EP-0615163-B1 | Positive resist material using particular onium salts | SHINETSU CHEMICAL CO (JP) | 1999-12-29 | — | — | EP | disclosed |
| US-5972559-A | A PHOTORESIST MIXTURE COMPRISING AN ORGANIC SOLVENT, A COPOLYCARBONS BASE RESIN, A PHOTOACID GENERATOR, AND AN AROMATIC ALKYLENE CARBOXYLIC ACID COMPOUND; FOR IMPROVING THE FOOTING ON NITRIDE FILM SUBSTRATES AND POST EXPOSURE DELAY | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-10-26 | — | — | US | disclosed |
| US-5972560-A | A CROSSLINKED POLYSILOXANE PHOTOACID GENERATOR HAVING HIGH TRANSPARENCY, HIGH RESOLUTION, IMPROVED LATITUDE OF EXPOSURE, PROCESS ADAPTABILITY, AND FOR PRECISE MICRO-PROCESSING | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-10-26 | — | — | US | disclosed |
| US-5942367-A | HIGH SENSITIVITY, RESOLUTION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-08-24 | — | — | US | disclosed |
| EP-0908783-A1 | Resist compositions, their preparation and use for patterning processes | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-04-14 | — | — | EP | disclosed |
| EP-0908473-A1 | Styrene polymers, chemically-amplified positive resist compositions, their preparation and use in a patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-04-14 | — | — | EP | disclosed |
| US-5876900-A | POLYHYDROXYSTYRENE POLYMER | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-03-02 | — | — | US | disclosed |
| EP-0887705-A1 | Resist compositions | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1998-12-30 | — | — | EP | disclosed |
| US-5679496-A | CONTAINING SULFONIUM SALT HAVING TERT-BUTOXYCARBONYLMETHOXY GROUP(S) AS ACID LABILE GROUPS; SENSITIVITY, RESOLUTION, ETCH AND HEAT RESISTANCE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1997-10-21 | — | — | US | disclosed |
| EP-0615163-A1 | Onium salts and positive resist materials using the same | Shin-Etsu Chemical Co., Ltd. (JP) | 1994-09-14 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260008932-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | ASH2L, ALKBH2, ITGA1 | HTT 4860/4885SMN1; SMN2 3419/4885LMNA 852/4885 |
| US-20260146026-A1 | COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT | CBR3, CBR1, NOTUM | HTT 3518/4885SMN1; SMN2 2208/4885LMNA 1641/4885 |
| US-20260093178-A1 | POLYMER, METHOD OF PRODUCING THE SAME, RESIST COMPOSITION INCLUDING THE POLYMER, AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION | RPS21, CA11, RPL21 | HTT 4300/4885SMN1; SMN2 564/4885LMNA 863/4885 |
| US-12583973-B2 | Polyimide-based polymer, positive photosensitive resin composition, negative photosensitive resin composition, patterning method, method for forming cured film, interlayer insulating film, surface protective film, and electronic component | PRDM9, ARCN1, PUF60 | HTT 3346/4885SMN1; SMN2 2618/4885LMNA 2609/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.