Tert-Butylbenzene

Tert-Butylbenzene

SCHEMBL2964334

CC(C)(C)c1ccccc1.CC(C)(C)c1ccccc1.O=S(=O)([O-])C(F)(F)F.c1ccc([I+]c2ccccc2)cc1

nearest known ligand 0.41

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Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
GPR3 P46089 2/20 0.41
PTPN1 P18031 1/20 0.41
HSD11B1 P28845 5/20 0.38
ALDH1A1 P00352 6/20 0.38
CA1 P00915 2/20 0.38
CA2 P00918 2/20 0.38
CA5A P35218 1/20 0.38
CA9 Q16790 1/20 0.38
HSD17B3 P37058 1/20 0.38
UQCRB P14927 1/20 0.38
HSD17B2 P37059 1/20 0.38
MAPT P10636 1/20 0.36
NR3C2 P08235 1/20 0.36
ACHE P22303 1/20 0.36
NPC1 O15118 1/20 0.35
RECQL P46063 1/20 0.35
RAB9A P51151 1/20 0.35
KDM4E B2RXH2 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Trifluoromethanesulfonic Acid SCHEMBL1002309 0.95 HSD11B1 (0.41) GPR3PTPN1HSD11B1ALDH1A1CA1
Trifluoromethanesulfonic Acid SCHEMBL1270048 0.95 HSD11B1 (0.41) GPR3PTPN1HSD11B1ALDH1A1CA1
Trifluoromethanesulfonic Acid SCHEMBL36627 0.88 ALDH1A1 (0.46) GPR3HSD11B1ALDH1A1CA1CA2
Biphenyl SCHEMBL1360704 0.88 PTPN1 (0.43) GPR3PTPN1HSD11B1ALDH1A1HSD17B3
Trifluoromethanesulfonic Acid SCHEMBL36177 0.88 GPR3 (0.50) GPR3PTPN1HSD11B1ALDH1A1CA1
Trifluoromethanesulfonic Acid SCHEMBL9279810 0.82 GPR3 (0.46) GPR3PTPN1HSD11B1ALDH1A1CA1
Trifluoromethanesulfonic Acid SCHEMBL1002308 0.82 HSD11B1 (0.40) PTPN1HSD11B1ALDH1A1CA1CA2
Trifluoromethanesulfonic Acid SCHEMBL1051928 0.81 HSD11B1 (0.39) GPR3PTPN1HSD11B1ALDH1A1ACHE
Trifluoromethanesulfonic Acid SCHEMBL2851342 0.81 GPR3 (0.47) GPR3ALDH1A1CA1CA2CA5A
SCHEMBL7708260 0.81 HSD11B1 (0.38) HSD11B1ALDH1A1CA1CA2MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7670745-B2 Alkali soluble polymer and positive working photosensitive resin composition using the same CHISSO CORPORATION (JP) 2010-03-02 US disclosed
US-20080131813-A1 Alkali soluble polymer and positive working photosensitive resin composition using the same CHISSO CORPORATION 2008-06-05 US disclosed
US-6340552-B1 AS PHOTORESISTS IN MANUFACTURING SEMICONDUCTORS KABUSHIKI KAISHA TOSHIBA (JP) 2002-01-22 US disclosed
US-6306553-B1 PHOTOSENSITIVE COMPOSITION COMPRISING ALKALI-SOLUBLE POLYMER, COMPOUND GENERATING ACID WHEN EXPOSED TO CHEMICAL RADIATION, COMPOUND HAVING SUBSTITUENT DECOMPOSED BY REACTION WITH ACID GENERATED AND GROUP CONVERTED TO ACID BY REACTION WITH ALKALI KABUSHIKI KAISHA TOSHIBA (JP) 2001-10-23 US disclosed
US-6168897-B1 PATTERNWISE-EXPOSING THE LAMINATED LAYER COMPRISING LIGHT SENSITIVE LAYER AND FLUORESCENT LIGHT-GENERATING LAYER TO ELECTROMAGNETIC RADIATION AND AN ELECTRON BEAM TO GENERATE A FLUORESCENT LIGHT CAUSING PHOTOCHEMICAL REACTION, DEVELOPING KABUSHIKI KAISHA TOSHIBA (JP) 2001-01-02 US disclosed
US-5928841-A Method of photoetching at 180 to 220 KABUSHIKI KAISHA TOSHIBA (JP) 1999-07-27 US disclosed
US-RE35821-E Pattern forming method including the formation of an acidic coating layer on the radiation-sensitive layer KABUSHIKI KAISHA TOSHIBA (JP) 1998-06-09 US disclosed
US-5332648-A Alklali soluble phenolic polymer, cyclic ester or sulfonate which converts to the acid, an onium salt which generates an an acid on exposure to radiation KABUSHIKI KAISHA TOSHIBA (JP) 1994-07-26 US disclosed
US-5326675-A Pattern forming method including the formation of an acidic coating layer on the radiation-sensitive layer KABUSHIKI KAISHA TOSHIBA (JP) 1994-07-05 US disclosed
US-5091282-A Comprising a 4-oxo-p-dioxin or a C5-6 carbcyclic fused derivative and a phenolic resin or a hydroxyl-containing polysiloxane or -silane; photoresists using short wavelengths of UV; sharpness KABUSHIKI KAISHA TOSHIBA (JP) 1992-02-25 US disclosed
EP-0396254-A2 Photosensitive composition and pattern formation method using the same KABUSHIKI KAISHA TOSHIBA (JP) 1990-11-07 EP disclosed