Water

Water

SCHEMBL30382913

O.O=C(O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(=O)O

nearest known ligand 0.72

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

ABCC9ABL1ACEACHEACVR1ADORA1ADORA2AADORA2BADORA3ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALOX5ATP4AATP4BBCRBTKCACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNB1CHRNDCHRNECHRNGCRBNCUL4ACXCR1CXCR2DDB1DDCDHFRDPP4DRD2DRD3DRD4EGFRERBB2ERBB4ESR1ESR2FDPSFKBP1AFLT1FLT3FLT4GARTGHSRGRIA1GRIA2GRIA3GRIA4GRIK1GRIK2GRIK3GRIK4GRIK5GRIN2AGSK3AGSK3BHDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IDH1IDH2IMPA1ITGA2BITGB3JAK1JAK2JAK3KCNJ11KCNK3KCNK9KDRKITMEN1METMMP1MMP13MMP7MMP8NANOD2NS5bODC1OPG057OPRD1OPRK1OPRM1PPARP1PARP2PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PKLRPPARDPPATPTGS1PTGS2RBX1ROCK1ROCK2RRM1RRM2RRM2BSCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC10A2SLC5A2SLC6A2SLC6A3SLC6A4SLC9A3SYKTACR1THRATHRBTOP1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYK2TYMSVDRampCblablaT-3blaT-4blaT-5blaT-6blaUOE-1dacAdacBdacCfolAfolPftsIgyrAgyrBileSmecAmrcAmrcBmrdAparCparEpbp2pbp4pbpApbpFrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUthyAykgMykgO

The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
THRB known ✓ P10828 1/20 0.72
HDAC3 known ✓ O15379 1/20 0.30
HDAC4 known ✓ P56524 1/20 0.30
HDAC1 known ✓ Q13547 1/20 0.30
HDAC7 known ✓ Q8WUI4 1/20 0.30
HDAC2 known ✓ Q92769 1/20 0.30
HDAC10 known ✓ Q969S8 1/20 0.30
HDAC11 known ✓ Q96DB2 1/20 0.30
HDAC8 known ✓ Q9BY41 1/20 0.30
HDAC6 known ✓ Q9UBN7 1/20 0.30
HDAC9 known ✓ Q9UKV0 1/20 0.30
HDAC5 known ✓ Q9UQL6 1/20 0.30
ACLY P53396 2/20 0.42
ALDH1A1 P00352 3/20 0.36
L3MBTL1 Q9Y468 1/20 0.36
TSHR P16473 2/20 0.33
TP53 P04637 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL712763 0.96 THRB (0.77) THRBACLYALDH1A1L3MBTL1TSHR
SCHEMBL714707 0.93 THRB (0.82) THRBACLYALDH1A1L3MBTL1TSHR
SCHEMBL517575 0.93 THRB (0.82) THRBACLYALDH1A1L3MBTL1TSHR
SCHEMBL8563271 0.93 THRB (0.82) THRBACLYALDH1A1L3MBTL1TSHR
SCHEMBL713583 0.93 THRB (0.82) THRBACLYALDH1A1L3MBTL1TSHR
Fluoride SCHEMBL11063083 0.93 THRB (0.72) THRBACLYALDH1A1L3MBTL1TSHR
SCHEMBL714887 0.93 THRB (0.82) THRBACLYALDH1A1L3MBTL1TSHR
SCHEMBL517814 0.93 THRB (0.82) THRBACLYALDH1A1L3MBTL1TSHR
SCHEMBL4965015 0.93 THRB (0.82) THRBACLYALDH1A1L3MBTL1TSHR
Phosphine SCHEMBL29691703 0.93 THRB (0.72) THRBACLYALDH1A1L3MBTL1TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115960609-B Etching solution for etching oxide layer on surface of wafer with high selectivity, preparation method and application thereof 浙江奥首材料科技有限公司 2023-10-24 CN claimed
CN-115960609-A Etching solution for etching oxide layer on surface of wafer with high selectivity, preparation method and application thereof 浙江奥首材料科技有限公司 2023-04-14 CN claimed
CN-115960609-B Etching solution for etching oxide layer on surface of wafer with high selectivity, preparation method and application thereof 浙江奥首材料科技有限公司 2023-10-24 CN disclosed
CN-115960609-A Etching solution for etching oxide layer on surface of wafer with high selectivity, preparation method and application thereof 浙江奥首材料科技有限公司 2023-04-14 CN disclosed