SCHEMBL3074823

SCHEMBL3074823

Cc1c(CC2CO2)cc(C(=O)O)c(C(=O)O)c1CC1CO1

nearest known ligand 0.33

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
NOTUM Q6P988 1/20 0.33
KDM4E B2RXH2 1/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
MAPT P10636 1/20 0.32
MEN1 O00255 1/20 0.31
APEX1 P27695 1/20 0.31
KMT2A Q03164 1/20 0.31
HMGB1 P09429 1/20 0.30
CXCL12 P48061 1/20 0.30
LDHA P00338 1/20 0.30
LDHB P07195 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1376717 0.89 HMGB1 (0.33) NOTUMKDM4EL3MBTL1MAPTMEN1
SCHEMBL1007226 0.89 LDHA (0.33) NOTUMKDM4EL3MBTL1MAPTMEN1
SCHEMBL2980272 0.88 NOTUM (0.34) NOTUMKDM4EL3MBTL1MAPTMEN1
SCHEMBL7727731 0.87 KDM4E (0.32) KDM4EL3MBTL1
SCHEMBL3076528 0.84 HMGB1 (0.33) MEN1KMT2AHMGB1CXCL12LDHA
SCHEMBL1007227 0.84 NOTUM (0.35) NOTUMKDM4EL3MBTL1MAPTMEN1
SCHEMBL1646383 0.83 ALDH1A1 (0.31) NOTUMLDHALDHB
SCHEMBL1644711 0.83
SCHEMBL6689310 0.81 HMGB1 (0.31) HMGB1CXCL12
SCHEMBL1644098 0.80

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-122095316-A Composition for forming resist underlayer film 2026-05-26 CN disclosed
WO-2025095106-A1 RESIST UNDERLAYER FILM FORMATION COMPOSITION 日産化学株式会社 2025-05-08 WO disclosed
CN-114746468-B Method for producing polymer 日产化学株式会社 2024-09-13 CN disclosed
US-20230103242-A1 METHOD FOR PRODUCING POLYMER NISSAN CHEMICAL CORPORATION (JP) 2023-03-30 US disclosed
US-20230029997-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM NISSAN CHEMICAL CORPORATION (JP) 2023-02-02 US disclosed
US-20160159993-A1 EPOXY RESIN COMPOSITION, FIBER-REINFORCED COMPOSITE MATERIAL, AND METHOD FOR PRODUCING THE SAME TORAY INDUSTRIES, INC. (JP) 2016-06-09 US disclosed
US-9240327-B2 Resist underlayer film-forming composition for EUV lithography containing condensation polymer NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2016-01-19 US disclosed
US-20140170567-A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION FOR EUV LITHOGRAPHY CONTAINING CONDENSATION POLYMER NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-06-19 US disclosed
EP-1757986-B1 ANTIREFLECTION FILM FOR SEMICONDUCTOR CONTAINING CONDENSATION TYPE POLYMER AND METHOD FOR FORMING PHOTORESIST PATTERN NISSAN CHEMICAL IND LTD (JP) 2014-05-14 EP disclosed
CN-103649835-A Resist underlayer film-forming composition for EUV lithography containing condensation polymer NISSAN CHEMICAL IND LTD 2014-03-19 CN disclosed
CN-101523292-B Method for manufacturing semiconductor device using quadruple-layer laminate NISSAN CHEMICAL IND LTD 2013-04-10 CN disclosed
US-7790356-B2 Condensation type polymer-containing anti-reflective coating for semiconductor NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-09-07 US disclosed
CN-101523292-A Method for manufacturing semiconductor device using quadruple-layer laminate NISSAN CHEMICAL IND LTD (JP) 2009-09-02 CN disclosed
US-20080038678-A1 Condensation Type Polymer-Containing Anti-Reflective Coating For Semiconductor NISSAN CHEMICAL INDUSTRIES LTD. (JP) 2008-02-14 US disclosed
EP-1757986-A1 ANTIREFLECTION FILM FOR SEMICONDUCTOR CONTAINING CONDENSATION TYPE POLYMER Nissan Chemical Industries, Ltd. (JP) 2007-02-28 EP disclosed