SCHEMBL3089313

SCHEMBL3089313

C=COC(COc1ccccc1)C1CCCCC1

nearest known ligand 0.42

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
LMNA P02545 2/20 0.39
MEN1 O00255 1/20 0.39
KMT2A Q03164 1/20 0.39
CYP2D6 P10635 1/20 0.38
TSHR P16473 1/20 0.38
HIF1A Q16665 1/20 0.38
IDO1 P14902 2/20 0.36
KDM4E B2RXH2 1/20 0.36
NPC1 O15118 1/20 0.36
PKM P14618 1/20 0.36
EPHX2 P34913 1/20 0.36
RAB9A P51151 1/20 0.36
SMN1; SMN2 Q16637 1/20 0.36
SCN4A P35499 2/20 0.36
METAP2 P50579 2/20 0.35
METAP1 P53582 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3099044 0.81 TEAD1 (0.32) LMNASCN4A
SCHEMBL4066072 0.77 LMNA (0.41) LMNAMEN1KMT2ACYP2D6TSHR
SCHEMBL3089315 0.77 SLC6A2 (0.39) MEN1KMT2AIDO1RAB9AMETAP2
SCHEMBL7809168 0.73 LMNA (0.50) LMNAMEN1KMT2ACYP2D6TSHR
SCHEMBL5146018 0.73 LMNA (0.40) LMNAMEN1KMT2ACYP2D6TSHR
SCHEMBL10193007 0.73 SHBG (0.33)
SCHEMBL11795671 0.72 LMNA (0.47) LMNACYP2D6KDM4ENPC1SCN4A
SCHEMBL23239453 0.69 LMNA (0.53) LMNACYP2D6TSHRKDM4ENPC1
SCHEMBL1602386 0.69 TP53 (0.33) LMNAKDM4ESMN1; SMN2
SCHEMBL6727689 0.68 SCN4A (0.55) LMNAMEN1KMT2ACYP2D6TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7794916-B2 Positive photosensitive composition, polymer compound used for the positive photosensitive composition, production method of the polymer compound, and pattern forming method using the positive photosensitive composition FUJIFILM CORPORATION (JP) 2010-09-14 US disclosed
EP-1465010-B1 Positive resist composition FUJIFILM CORP (JP) 2009-10-21 EP disclosed
US-20080187863-A1 POSITIVE PHOTOSENSITIVE COMPOSITION, POLYMER COMPOUND USED FOR THE POSITIVE PHOTOSENSITIVE COMPOSITION, PRODUCTION METHOD OF THE POLYMER COMPOUND, AND PATTERN FORMING METHOD USING THE POSITIVE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2008-08-07 US disclosed
EP-1925979-A1 Positive photosensitive composition, polymer compound used for the positive photosensitive composition, production method of the polymer compound, and pattern forming method using the positive photosensitive composition FUJIFILM Corporation (JP) 2008-05-28 EP disclosed
US-7232640-B1 Positive resist composition FUJIFILM CORPORATION (JP) 2007-06-19 US disclosed
US-20070128547-A1 POSITIVE RESIST COMPOSITION FUJI PHOTO FILM CO., LTD. 2007-06-07 US disclosed
EP-1465010-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. (JP) 2004-10-06 EP disclosed