SCHEMBL3092305

SCHEMBL3092305

CCO[Si](CCNS(=O)(=O)C(=O)c1ccccc1)(OCC)OCC

nearest known ligand 0.37

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
LMNA P02545 4/20 0.36
SMN1; SMN2 Q16637 2/20 0.36
MAPK1 P28482 1/20 0.36
NAAA Q02083 1/20 0.36
HPGD P15428 2/20 0.35
ALDH1A1 P00352 1/20 0.35
NPSR1 Q6W5P4 1/20 0.35
POLB P06746 1/20 0.35
RECQL P46063 1/20 0.35
L3MBTL1 Q9Y468 1/20 0.35
TSHR P16473 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3098511 0.92 LMNA (0.40) LMNASMN1; SMN2MAPK1NAAAHPGD
SCHEMBL3092524 0.86 TSHR (0.40) LMNASMN1; SMN2HPGDALDH1A1NPSR1
SCHEMBL3108683 0.78 ALDH1A1 (0.40) LMNASMN1; SMN2MAPK1NAAAHPGD
SCHEMBL3095224 0.75 HPGD (0.54) HPGDALDH1A1
SCHEMBL27739752 0.75 LMNA (0.50) LMNASMN1; SMN2MAPK1HPGDALDH1A1
SCHEMBL3110057 0.74 MEN1 (0.39) LMNASMN1; SMN2MAPK1NAAAHPGD
SCHEMBL29127798 0.72 NAAA (0.60) LMNASMN1; SMN2NAAAHPGDALDH1A1
SCHEMBL3102149 0.72 MEN1 (0.49) LMNAHPGDALDH1A1POLBL3MBTL1
Benzophenone SCHEMBL6035243 0.71 ALDH1A1 (0.48) LMNASMN1; SMN2MAPK1HPGDALDH1A1
SCHEMBL3932380 0.69 SMN1; SMN2 (0.55) LMNASMN1; SMN2NAAAHPGDALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9170492-B2 Silicon-containing film-forming composition, silicon-containing film, and pattern forming method JSR CORPORATION (JP) 2015-10-27 US disclosed
US-9140985-B2 2015-09-22 US disclosed
US-20100233632-A1 SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, AND PATTERN FORMING METHOD JSR CORPORATION (JP) 2010-09-16 US disclosed