SCHEMBL3099254

SCHEMBL3099254

CO[Si](Cc1ccc(Oc2ccccc2)cc1)(OC)OC

nearest known ligand 0.52

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 9/20 0.52
TSHR P16473 1/20 0.46
FFAR1 O14842 1/20 0.44
KDM4E B2RXH2 1/20 0.44
ALDH1A1 P00352 1/20 0.44
HTT P42858 1/20 0.44
SMN1; SMN2 Q16637 1/20 0.44
SRD5A2 P31213 2/20 0.43
FAAH O00519 1/20 0.42
MGLL Q99685 1/20 0.42
NR1H2 P55055 1/20 0.42
BAX Q07812 1/20 0.42
MAOA P21397 1/20 0.42
EPHX2 P34913 1/20 0.41
GRIN1 Q05586 1/20 0.41
GRIN2B Q13224 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL104953 0.83 TP53 (0.42) LTA4HTSHRKDM4EALDH1A1
SCHEMBL415828 0.81 ESR1 (0.39) LTA4HTSHRALDH1A1SMN1; SMN2
Methylamine SCHEMBL29141165 0.79 IDO1 (0.39) LTA4HTSHRALDH1A1SMN1; SMN2MAOA
SCHEMBL3098403 0.79 IDO1 (0.52) LTA4HTSHRKDM4EALDH1A1SMN1; SMN2
SCHEMBL10569164 0.78 LTA4H (0.39) LTA4HTSHR
SCHEMBL28448628 0.78 LTA4H (0.39) LTA4HTSHR
Diphenylether SCHEMBL9580840 0.78 LTA4H (0.52) LTA4HTSHRHTTSMN1; SMN2NR1H2
Toluene SCHEMBL6324024 0.76 LMNA (0.46) LTA4HTSHRKDM4EALDH1A1HTT
SCHEMBL30791468 0.74 MAOB (0.38)
Diphenylether SCHEMBL9580898 0.74 LTA4H (0.54) LTA4HTSHRKDM4EALDH1A1HTT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 38 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11685702-B2 Method for producing arene compounds and arene compounds produced by the same JSI SILICONE CO. (KR) 2023-06-27 US disclosed
US-20210188739-A1 METHOD FOR PRODUCING ARENE COMPOUNDS AND ARENE COMPOUNDS PRODUCED BY THE SAME JSI SILICONE CO. (KR) 2021-06-24 US disclosed
US-10025188-B2 Resist pattern-forming method JSR CORPORATION (JP) 2018-07-17 US disclosed
US-20170322492-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-11-09 US disclosed
US-20160320705-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2016-11-03 US disclosed
US-9434609-B2 Method for forming pattern, and polysiloxane composition JSR CORPORATION (JP) 2016-09-06 US disclosed
US-9329478-B2 Polysiloxane composition and pattern-forming method JSR CORPORATION (JP) 2016-05-03 US disclosed
US-20160097978-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2016-04-07 US disclosed
US-9268229-B2 Composition for forming resist underlayer film, and pattern-forming method JSR CORPORATION (JP) 2016-02-23 US disclosed
US-9250526-B2 Composition for forming resist underlayer film, and pattern-forming method JSR CORPORATION (JP) 2016-02-02 US disclosed
EP-2615497-A1 RESIST PATTERN FORMING METHOD JSR Corporation (JP) 2013-07-17 EP disclosed
US-20130130179-A1 POLYSILOXANE COMPOSITION AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2013-05-23 US disclosed
WO-2013061601-A1 PATTERN-FORMING METHOD JSR CORPORATION (JP) 2013-05-02 WO disclosed
US-20130107235-A1 PATTERN-FORMING METHOD JSR CORPORATION (JP) 2013-05-02 US disclosed
US-20130101942-A1 METHOD FOR FORMING RESIST PATTERN, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM JSR CORPORATION (JP) 2013-04-25 US disclosed
EP-2579304-A1 INSULATION PATTERN FORMING METHOD AND INSULATION PATTERN FORMING MATERIAL FOR DAMASCENE PROCESS JSR Corporation (JP) 2013-04-10 EP disclosed
US-20130084394-A1 INSULATION PATTERN-FORMING METHOD AND INSULATION PATTERN-FORMING MATERIAL JSR CORPORATION (JP) 2013-04-04 US disclosed
US-20120183908-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2012-07-19 US disclosed
US-20100233632-A1 SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, AND PATTERN FORMING METHOD JSR CORPORATION (JP) 2010-09-16 US disclosed
US-20100178620-A1 INVERTED PATTERN FORMING METHOD AND RESIN COMPOSITION JSR CORPORATION (JP) 2010-07-15 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20210188739-A1 METHOD FOR PRODUCING ARENE COMPOUNDS AND ARENE COMPOUNDS PRODUCED BY THE SAME PFAS, FRK, AGPAT2 LTA4H 1303/4885TSHR 2847/4885FFAR1 1374/4885
US-11685702-B2 Method for producing arene compounds and arene compounds produced by the same PFAS, FRK, AGPAT2 LTA4H 1303/4885TSHR 2847/4885FFAR1 1374/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.