SCHEMBL3109867

SCHEMBL3109867

C=CCc1ccccc1[SiH](OC)OC

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
GABRA1 P14867 1/20 0.39
GABRB2 P47870 1/20 0.39
ALDH1A1 P00352 3/20 0.37
TSHR P16473 2/20 0.36
CYP3A4 P08684 2/20 0.36
ALOX15 P16050 2/20 0.36
TP53 P04637 1/20 0.36
ALOX12 P18054 1/20 0.36
SMN1; SMN2 Q16637 1/20 0.36
ADRB2 P07550 3/20 0.35
ADRB1 P08588 3/20 0.35
ADRA2C P18825 3/20 0.35
LMNA P02545 2/20 0.35
HTR1A P08908 2/20 0.35
ADRB3 P13945 1/20 0.35
SLC6A2 P23975 1/20 0.35
BDKRB2 P30411 1/20 0.35
SLC6A4 P31645 1/20 0.35
ADRA1A P35348 1/20 0.35
HTR2B P41595 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3344111 0.82 GABRA1 (0.37) GABRA1GABRB2ALDH1A1TSHRADRB2
SCHEMBL545114 0.79 GABRA1 (0.37) GABRA1GABRB2ALDH1A1TSHRADRB2
SCHEMBL28730875 0.79 GABRA1 (0.42) GABRA1GABRB2ALDH1A1TSHRADRB2
SCHEMBL4274033 0.76 GABRA1 (0.38) GABRA1GABRB2ALDH1A1TP53CYP2D6
SCHEMBL28730873 0.76 GABRA1 (0.40) GABRA1GABRB2ALDH1A1TSHRADRB2
SCHEMBL1263395 0.75 ALDH1A1 (0.32) ALDH1A1TSHR
SCHEMBL1262921 0.75 ALDH1A1 (0.34) ALDH1A1TSHR
SCHEMBL6841674 0.75 GABRA1 (0.47) GABRA1GABRB2ALDH1A1TSHRADRB2
SCHEMBL22551425 0.75 IDO1 (0.40) ALDH1A1
SCHEMBL4075491 0.75 ALDH1A1 (0.32) ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3176216-B1 HYDROPHILIC MATERIAL COMPRISING SULFONATE COPOLYMER AND AMINO RESIN MITSUI CHEMICALS INC (JP) 2019-04-24 EP disclosed
US-9976050-B2 Hydrophilic materials including sulfonate copolymer and amino resin MITSUI CHEMICALS, INC. (JP) 2018-05-22 US disclosed
US-20170210937-A1 HYDROPHILIC MATERIALS INCLUDING SULFONATE COPOLYMER AND AMINO RESIN MITSUI CHEMICALS, INC. (JP) 2017-07-27 US disclosed
EP-3176216-A1 HYDROPHILIC MATERIAL COMPRISING SULFONATE COPOLYMER AND AMINO RESIN Mitsui Chemicals, Inc. (JP) 2017-06-07 EP disclosed
US-20160046827-A1 FILM COMPRISING COPOLYMER OR COMPOSITION MITSUI CHEMICALS, INC. (JP) 2016-02-18 US disclosed
EP-2985301-A1 COPOLYMER AND HYDROPHILIC MATERIAL COMPRISING SAME Mitsui Chemicals, Inc. (JP) 2016-02-17 EP disclosed
EP-2985324-A1 FILM COMPRISING COPOLYMER OR COMPOSITION Mitsui Chemicals, Inc. (JP) 2016-02-17 EP disclosed
US-20160032036-A1 COPOLYMER AND HYDROPHILIC MATERIAL COMPOSED OF THE SAME MITSUI CHEMICALS, INC. (JP) 2016-02-04 US disclosed
US-9170492-B2 Silicon-containing film-forming composition, silicon-containing film, and pattern forming method JSR CORPORATION (JP) 2015-10-27 US disclosed
US-9140985-B2 2015-09-22 US disclosed
US-8968458-B2 Composition for resist underlayer film and process for producing same JSR CORPORATION (JP) 2015-03-03 US disclosed
US-8808446-B2 Composition for resist underlayer film and process for producing same JSR CORPORATION (JP) 2014-08-19 US disclosed
US-20100233632-A1 SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, AND PATTERN FORMING METHOD JSR CORPORATION (JP) 2010-09-16 US disclosed
US-20100151384-A1 COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME JSR CORPORATION (JP) 2010-06-17 US disclosed
US-20090050020-A1 COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME JSR CORPORATION (JP) 2009-02-26 US disclosed
EP-1855159-A1 COMPOSITION FOR UNDERLAYER FILM OF RESIST AND PROCESS FOR PRODUCING THE SAME JSR Corporation (JP) 2007-11-14 EP disclosed
US-7291567-B2 Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR CORPORATION (JP) 2007-11-06 US disclosed
US-20060024980-A1 Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR CORPORATION (JP) 2006-02-02 US disclosed
EP-1619226-A1 Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR Corporation (JP) 2006-01-25 EP disclosed