Urea

Urea

SCHEMBL3127972

C=C.NC(N)=O.O=C(O)O

nearest known ligand 0.60

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

GSK3AGSK3BIMPA1

The experimentally established mechanism targets of Urea. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 6/20 0.60
ALDH1A1 P00352 4/20 0.60
TDP1 Q9NUW8 4/20 0.60
OR51E2 Q9H255 2/20 0.60
ACHE P22303 1/20 0.55
CA2 P00918 2/20 0.50
CA9 Q16790 2/20 0.50
CA1 P00915 1/20 0.50
LDHA P00338 2/20 0.46
LDHB P07195 1/20 0.46
TSHR P16473 4/20 0.40
FGFR4 P22455 1/20 0.40
BLM P54132 5/20 0.39
PMP22 Q01453 4/20 0.39
ALOX15 P16050 2/20 0.39
CYP3A4 P08684 4/20 0.33
HSD17B10 Q99714 3/20 0.33
NFKB1 P19838 2/20 0.33
HPGD P15428 2/20 0.33
CYP1A2 P05177 2/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Urea SCHEMBL20267806 0.91 ALDH1A1 (0.50) LMNAALDH1A1TDP1OR51E2ACHE
Urea SCHEMBL27705981 0.90 LMNA (0.60) LMNAALDH1A1TDP1OR51E2ACHE
Carbamic Acid SCHEMBL5450549 0.90 ACHE (0.70) LMNAALDH1A1TDP1OR51E2ACHE
Urea SCHEMBL687586 0.89
Urea SCHEMBL3460099 0.89 LMNA (0.75) LMNAALDH1A1TDP1OR51E2ACHE
Urea SCHEMBL36685 0.89
Urea SCHEMBL4454525 0.89 LMNA (0.75) LMNAALDH1A1TDP1OR51E2ACHE
Urea SCHEMBL347768 0.89
Carbamic Acid SCHEMBL8987188 0.84 ACHE (0.78) LMNAALDH1A1TDP1OR51E2ACHE
Carbamic Acid SCHEMBL2472526 0.84

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-1802606-B Resist pattern swelling material, and method for patterning using same FUJITSU LTD 2012-12-05 CN disclosed
US-7662539-B2 Resist pattern thickening material, process for forming resist pattern, and process for manufacturing semiconductor device FUJITSU LIMITED (JP) 2010-02-16 US disclosed
CN-100568094-C Resist pattern manufacturing process, thickening material therefor, and semiconductor device manufacturing process FUJITSU LTD (JP) 2009-12-09 CN disclosed
US-7361448-B2 resist pattern thickening material contains a resin and a polyhydric alcohol; water-soluble or alkali-soluble; using the thickened resist pattern as a mask, a high-quality, high-performance semiconductor device having an extremely fine pattern can be produced FUJITSU LIMITED (JP) 2008-04-22 US disclosed
CN-1802606-A Resist pattern swelling material, and method for patterning using same FUJITSU LTD (JP) 2006-07-12 CN disclosed
EP-1610184-A1 Resist pattern thickening material and process for forming the same, and semiconductor device and process for manufacturing the same FUJITSU LIMITED (JP) 2005-12-28 EP disclosed
US-20050277054-A1 Resist pattern thickening material and process for forming the same, and semiconductor device and process for manufacturing the same FUJITSU LIMITED (JP) 2005-12-15 US disclosed
CN-1637602-A Producing technology for non-rusting agent pattern and thickening material thereof and semiconductor device producing technology FUJITSU LTD (JP) 2005-07-13 CN disclosed
EP-1513013-A2 Resist pattern thickening material, process for forming resist pattern, and process for manufacturing semiconductor device FUJITSU LIMITED (JP) 2005-03-09 EP disclosed
US-20050031987-A1 Resist pattern thickening material, process for forming resist pattern, and process for manufacturing semiconductor device FUJITSU LIMITED (JP) 2005-02-10 US disclosed