SCHEMBL3141352

SCHEMBL3141352

CCOCCC(NC(N)=O)[SiH](OC)OC

nearest known ligand 0.37

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.37
CAD P27708 1/20 0.34
L3MBTL1 Q9Y468 1/20 0.32
ALDH1A1 P00352 1/20 0.32
POLB P06746 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3155508 0.84 TSHR (0.33) TSHRCADALDH1A1
SCHEMBL963464 0.83 CAD (0.34) CAD
SCHEMBL3156137 0.73 CAD (0.30) CAD
SCHEMBL1069693 0.73 FOLH1 (0.34) CADALDH1A1
SCHEMBL962709 0.71 CAD (0.37) CADL3MBTL1
SCHEMBL8370783 0.67 EPHX1 (0.33) TSHRPOLB
SCHEMBL960398 0.67 PLA2G2C (0.36)
SCHEMBL2460038 0.65 CA12 (0.33) CADALDH1A1
SCHEMBL10638508 0.65 ALDH1A1 (0.41) TSHRALDH1A1
SCHEMBL24648741 0.65 TSHR (0.42) TSHRALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2026100338-A1 PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR PRODUCING CURED RELIEF PATTERN 旭化成株式会社 2026-05-15 WO disclosed
US-12613465-B2 Photosensitive resin composition and method for producing cured relief pattern ASAHI KASEI KABUSHIKI KAISHA (JP) 2026-04-28 US disclosed
US-20260099093-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING CURED RELIEF PATTERN USING SAME, AND METHOD FOR PRODUCING POLYIMIDE FILM USING SAME ASAHI KASEI KABUSHIKI KAISHA (JP) 2026-04-09 US disclosed
US-12504688-B2 Negative photosensitive resin composition and method for manufacturing cured relief pattern ASAHI KASEI KABUSHIKI KAISHA (JP) 2025-12-23 US disclosed
US-20250370339-A1 NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR MANUFACTURING CURED RELIEF PATTERN ASAHI KASEI KABUSHIKI KAISHA (JP) 2025-12-04 US disclosed
US-20240329525-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING CURED RELIEF PATTERN, AND SEMICONDUCTOR APPARATUS ASAHI KASEI KABUSHIKI KAISHA (JP) 2024-10-03 US disclosed
US-20240210827-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING CURED RELIEF PATTERN, AND SEMICONDUCTOR APPARATUS ASAHI KASEI KABUSHIKI KAISHA (JP) 2024-06-27 US disclosed
US-20240101761-A1 POLYIMIDE PRECURSOR RESIN COMPOSITION AND METHOD FOR MANUFACTURING SAME ASAHI KASEI KABUSHIKI KAISHA (JP) 2024-03-28 US disclosed
US-20230221639-A1 PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR PRODUCING CURED RELIEF PATTERN ASAHI KASEI KABUSHIKI KAISHA (JP) 2023-07-13 US disclosed
US-20230110416-A1 NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR MANUFACTURING CURED RELIEF PATTERN ASAHI KASEI KABUSHIKI KAISHA (JP) 2023-04-13 US disclosed
US-10831101-B2 Photosensitive resin composition, method for manufacturing cured relief pattern, and semiconductor apparatus ASAHI KASEI KABUSHIKI KAISHA (JP) 2020-11-10 US disclosed
WO-2020026840-A1 NEGATIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR PRODUCING POLYIMIDE AND CURED RELIEF PATTERN USING SAME 旭化成株式会社 2020-02-06 WO disclosed
US-20190113845-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING CURED RELIEF PATTERN, AND SEMICONDUCTOR APPARATUS ASAHI KASEI KABUSHIKI KAISHA (JP) 2019-04-18 US disclosed
US-20180373147-A1 PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR PRODUCING CURED RELIEF PATTERN ASAHI KASEI KABUSHIKI KAISHA (JP) 2018-12-27 US disclosed
US-20170102613-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING HARDENED RELIEF PATTERN, SEMICONDUCTOR DEVICE AND DISPLAY DEVICE ASAHI KASEI E-MATERIALS CORPORATION (JP) 2017-04-13 US disclosed
US-9575410-B2 Photosensitive resin composition, method for producing hardened relief pattern, semiconductor device and display device ASAHI KASEI E-MATERIALS CORPORATION (JP) 2017-02-21 US disclosed
US-20140349222-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING HARDENED RELIEF PATTERN, SEMICONDUCTOR DEVICE AND DISPLAY DEVICE ASAHI KASEI E-MATERIALS CORPORATION (JP) 2014-11-27 US disclosed
US-7687208-B2 Positive photosensitive resin composition ASAHI KASEI EMD CORPORATION (JP) 2010-03-30 US disclosed
US-20090202794-A1 POSITIVE PHOTOSENSITIVE RESIN COMPOSITION ASAHI KASEI EMD CORPORATION (JP) 2009-08-13 US disclosed
EP-2056163-A1 POSITIVE PHOTOSENSITIVE RESIN COMPOSITION Asahi Kasei EMD Corporation (JP) 2009-05-06 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12613465-B2 Photosensitive resin composition and method for producing cured relief pattern ARCN1, GLRA1, PSMA1 TSHR 3312/4885CAD 2048/4885L3MBTL1 2733/4885
US-20260099093-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING CURED RELIEF PATTERN USING SAME, AND METHOD FOR PRODUCING POLYIMIDE FILM USING SAME CD79B, ITGA1, PTK2 TSHR 2388/4885CAD 134/4885L3MBTL1 2590/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.