SCHEMBL3256270

SCHEMBL3256270

O=S(=O)(CS(=O)(=O)c1ccc(F)cc1)c1ccc(F)cc1

nearest known ligand 0.58

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
PLCG1 P19174 1/20 0.58
KMT2A Q03164 3/20 0.52
ALDH1A1 P00352 2/20 0.52
MEN1 O00255 1/20 0.52
PKM P14618 1/20 0.52
CA2 P00918 3/20 0.48
MMP2 P08253 2/20 0.48
MMP9 P14780 2/20 0.48
CA1 P00915 2/20 0.48
MMP1 P03956 1/20 0.48
MMP8 P22894 1/20 0.48
MMP13 P45452 1/20 0.48
HSD11B1 P28845 2/20 0.46
PAX8 Q06710 1/20 0.44
MMP14 P50281 1/20 0.44
PSEN1 P49768 1/20 0.44
PSEN2 P49810 1/20 0.44
APH1B Q8WW43 1/20 0.44
NCSTN Q92542 1/20 0.44
APH1A Q96BI3 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8763331 0.83 ALDH1A1 (0.43) PLCG1KMT2AALDH1A1MEN1PKM
Fluoresone SCHEMBL24999 0.82 PSIP1 (0.58) KMT2AALDH1A1MEN1PKMCA2
SCHEMBL15199478 0.82 MMP2 (0.46) KMT2AALDH1A1MEN1PKMCA2
SCHEMBL9704701 0.82 CA1 (0.46) KMT2AALDH1A1MEN1PKMCA2
SCHEMBL3108160 0.80 PSEN1 (0.46) KMT2AALDH1A1MEN1PKMCA2
SCHEMBL14544901 0.80 MMP2 (0.45) KMT2AALDH1A1MEN1PKMCA2
SCHEMBL15013716 0.80 ALDH1A1 (0.56) KMT2AALDH1A1MEN1PKMCA2
SCHEMBL28108051 0.78 MLNR (0.53) CA2MMP2MMP9CA1MMP1
SCHEMBL28110228 0.77 ALDH1A1 (0.43) PLCG1KMT2AALDH1A1MEN1PKM
SCHEMBL12570643 0.77 PTGS2 (0.58) KMT2APAX8

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-0989460-B1 PATTERN FORMING METHOD AZ ELECTRONIC MATERIALS USA (US) 2010-05-26 EP disclosed
US-6527966-B1 Forming a pattern composed of an etchable layer by conducting dry etching of an etchable layer formed on a substrate for semiconductor through a mask of patterned radiation sensitive material coating formed on the etchable layer CLARIANT FINANCE (BVI) LIMITED (VG) 2003-03-04 US disclosed
US-6479210-B2 COMPRISING AN ORGANIC MATERIAL CONTAINING SUBSTITUENT(S) CAPABLE OF BEING RELEASED IN THE PRESENCE OF ACID, AND ACID GENERATORS OF AT LEAST ONE ONIUM SALT AND SULFONE AND/OR SULFONATE COMPOUNDS; RESOLUTION, SENSITIVITY CLARIANT FINANCE (BVI) LIMITED (VG) 2002-11-12 US disclosed
US-20010036589-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION MERCK PATENT GMBH (DE) 2001-11-01 US disclosed
EP-0827970-B1 New acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials CLARIANT FINANCE BVI LTD (VG) 2001-09-26 EP disclosed
EP-0989460-A1 PATTERN FORMING METHOD Clariant Finance (BVI) Limited (VG) 2000-03-29 EP disclosed
EP-0989459-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION Clariant Finance (BVI) Limited (VG) 2000-03-29 EP disclosed
US-5852128-A Acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials CLARIANT AG (CH) 1998-12-22 US disclosed
EP-0827970-A2 New acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials Clariant AG (CH) 1998-03-11 EP disclosed
EP-0654149-B1 POSITIVE-ACTING RADIATION-SENSITIVE MIXTURE AND RECORDING MATERIAL PRODUCED THEREWITH HOECHST AG (DE) 1997-02-05 EP disclosed
EP-0654149-A1 POSITIVE-ACTING RADIATION-SENSITIVE MIXTURE AND RECORDING MATERIAL PRODUCED THEREWITH. HOECHST AG (DE) 1995-05-24 EP disclosed
WO-1994003837-A1 POSITIVE-ACTING RADIATION-SENSITIVE MIXTURE AND RECORDING MATERIAL PRODUCED THEREWITH HOECHST AKTIENGESELLSCHAFT (DE) 1994-02-17 WO disclosed