Tetramethylammonium Ion

Tetramethylammonium Ion

SCHEMBL3361129

CCCCC(c1ccc(F)cc1)C(OB([O-])O)(c1ccc(F)cc1)c1ccc(F)cc1.C[N+](C)(C)C

nearest known ligand 0.33

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Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
FAAH O00519 1/20 0.32
SLC6A9 P48067 1/20 0.31
MEN1 O00255 1/20 0.30
KMT2A Q03164 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Tetrylammonium SCHEMBL3361545 0.93 FAAH (0.31) FAAHSLC6A9MEN1KMT2A
Tetrabuthylammonium SCHEMBL3362457 0.92 FAAH (0.33) FAAH
Tetramethylammonium Ion SCHEMBL3360762 0.88 SLC6A9 (0.31) FAAHSLC6A9
SCHEMBL8016538 0.86 FAAH (0.35) FAAHSLC6A9MEN1KMT2A
SCHEMBL8016536 0.83 FAAH (0.34) FAAHSLC6A9MEN1KMT2A
Tetrabuthylammonium SCHEMBL3362455 0.82 FAAH (0.32) FAAH
Tetramethylammonium Ion SCHEMBL3362589 0.81 SLC7A5 (0.32)
Tetrylammonium SCHEMBL3361503 0.81
Tetramethylammonium Ion SCHEMBL8006459 0.78 MEN1 (0.35) FAAHMEN1KMT2A
Tetramethylammonium Ion SCHEMBL8006461 0.78 MMP13 (0.39) FAAHMEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2172806-A2 Photosensitive resin composition, photosensitive element using the same, method for producing resist pattern and method for producing printed wiring board Hitachi Chemical Company, Ltd. (JP) 2010-04-07 EP disclosed
US-7232647-B2 Photosensitive resin composition, photosensitive element using the same, method for producing resist pattern and method for producing printed wiring board HITACHI CHEMICAL CO., LTD. (JP) 2007-06-19 US disclosed
US-7220533-B2 Photosensitive resin composition, photosensitive element using the same, method for producing resist pattern, and method for producing printed wiring board HITACHI CHEMICAL CO., LTD. (JP) 2007-05-22 US disclosed
US-20050164124-A1 Photosensitive resin composition, photosensitive element using the same, method for producing resist pattern and method for producing printed wiring board HITACHI CHEMICAL CO., LTD. (JP) 2005-07-28 US disclosed
US-20040038149-A1 Photosensitive resin composition, photosensitive element comprising the same, method for producing resist pattern, and method for producing printed wiring board HITACHI CHEMICAL CO., LTD. (JP) 2004-02-26 US disclosed
EP-1282010-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE ELEMENT COMPRISING THE SAME, METHOD FOR PRODUCING RESIST PATTERN, AND METHOD FOR PRODUCING PRINTED WIRING BOARD HITACHI CHEMICAL COMPANY, LTD. (JP) 2003-02-05 EP disclosed