Trifluoromethanesulfonic Acid

Trifluoromethanesulfonic Acid

SCHEMBL3367466

CCCOC(=O)OC1CC[S+](c2cccc3ccccc23)C1.O=S(=O)([O-])C(F)(F)F

nearest known ligand 0.32

Full drug profile on Sugi Atlas →

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.32
HPGD P15428 1/20 0.32
CNR1 P21554 1/20 0.30
CNR2 P34972 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Trifluoromethanesulfonic Acid SCHEMBL3365764 0.95 CNR1 (0.32) ALDH1A1HPGDCNR1CNR2
Trifluoromethanesulfonic Acid SCHEMBL2745117 0.93 ALDH1A1 (0.38) ALDH1A1HPGD
SCHEMBL3367266 0.92
Trifluoromethanesulfonic Acid SCHEMBL6838193 0.88 HCRTR1 (0.33) ALDH1A1HPGD
SCHEMBL3362985 0.87 CNR1 (0.33) ALDH1A1HPGDCNR1CNR2
SCHEMBL3368083 0.87
Trifluoromethanesulfonic Acid SCHEMBL2745482 0.86 MEN1 (0.32)
Trifluoromethanesulfonic Acid SCHEMBL3365831 0.85 KCNJ11 (0.33) ALDH1A1
Trifluoromethanesulfonic Acid SCHEMBL6562640 0.85 MLNR (0.33) ALDH1A1
SCHEMBL3363653 0.84 ALDH1A1 (0.34) ALDH1A1HPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1164434-B1 Radiation-sensitive resin composition JSR CORP (JP) 2010-10-06 EP disclosed
US-6964840-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2005-11-15 US disclosed
US-6800414-B2 FLUOROPOLYMER JSR CORPORATION (JP) 2004-10-05 US disclosed
US-6403280-B1 TERPOLYMER COMPRISING MALEIC ANHYDRIDE, NORBORNENE ESTER DERIVATIVE, AND ALICYCLIC (METH)ACRYLATE MONOMERS; DURABILITY TO DRY ETCHING; TRANSPARENCY, STORAGE STABILITY JSR CORPORATION (JP) 2002-06-11 US disclosed
EP-1164434-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2001-12-19 EP disclosed
US-6180316-B1 SUITABLE FOR USE AS CHEMICALLY AMPLIFIED RESIST USED IN MANUFACTURING OF INTEGRATED CIRCUITS JSR CORPORATION (JP) 2001-01-30 US disclosed
EP-1048983-A1 Radiation sensitive resin composition JSR Corporation (JP) 2000-11-02 EP disclosed
EP-0930541-A1 Radiation sensitive resin composition JSR Corporation (JP) 1999-07-21 EP disclosed