Known targets — ChEMBL curated mechanism
ABCC9ABL1ACEACHEACVR1ADORA1ADORA2AADORA2BADORA3ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALOX5ATP4AATP4BBCRBTKCACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNB1CHRNDCHRNECHRNGCRBNCUL4ACXCR1CXCR2DDB1DDCDHFRDPP4DRD2DRD3DRD4EGFRERBB2ERBB4ESR1ESR2FDPSFKBP1AFLT1FLT3FLT4GARTGHSRGRIA1GRIA2GRIA3GRIA4GRIK1GRIK2GRIK3GRIK4GRIK5GRIN2AGSK3AGSK3BHDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IDH1IDH2IMPA1ITGA2BITGB3JAK1JAK2JAK3KCNJ11KCNK3KCNK9KDRKITMEN1METMMP1MMP13MMP7MMP8NANOD2NS5bODC1OPG057OPRD1OPRK1OPRM1PPARP1PARP2PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PKLRPPARDPPATPTGS1PTGS2RBX1ROCK1ROCK2RRM1RRM2RRM2BSCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC10A2SLC5A2SLC6A2SLC6A3SLC6A4SLC9A3SYKTACR1THRATHRBTOP1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYK2TYMSVDRampCblablaT-3blaT-4blaT-5blaT-6blaUOE-1dacAdacBdacCfolAfolPftsIgyrAgyrBileSmecAmrcAmrcBmrdAparCparEpbp2pbp4pbpApbpFrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUthyAykgMykgO
The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Water SCHEMBL670139 | 1.00 | — | — | |
| Water SCHEMBL21627254 | 0.87 | — | — | |
| Water SCHEMBL8083667 | 0.87 | — | — | |
| Water SCHEMBL7721919 | 0.87 | — | — | |
| Water SCHEMBL408458 | 0.87 | — | — | |
| Water SCHEMBL3559541 | 0.87 | — | — | |
| Water SCHEMBL19119280 | 0.87 | — | — | |
| Water SCHEMBL25199651 | 0.82 | — | — | |
| Water SCHEMBL9723088 | 0.82 | — | — | |
| Water SCHEMBL10378772 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 178 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-106298894-A | The forming method of semiconductor device | 中芯国际集成电路制造(上海)有限公司 | 2017-01-04 | — | — | CN | claimed |
| CN-103531453-B | Semiconductor integrated device and preparation method thereof | 中芯国际集成电路制造(上海)有限公司 | 2016-12-21 | — | — | CN | claimed |
| CN-103390557-B | Semiconductor integrated device and preparation method thereof | 中芯国际集成电路制造(上海)有限公司 | 2016-12-14 | — | — | CN | claimed |
| CN-106233480-A | Piezoelectric element, method for manufacturing piezoelectric element, piezoelectric actuator, ink jet head, and ink jet printer | 柯尼卡美能达株式会社 | 2016-12-14 | — | — | CN | claimed |
| CN-106158645-A | The forming method of semiconductor device | 中芯国际集成电路制造(上海)有限公司 | 2016-11-23 | — | — | CN | claimed |
| CN-103794481-B | High-k/metal gate electrode structure and manufacture method thereof | 中芯国际集成电路制造(上海)有限公司 | 2016-10-05 | — | — | CN | claimed |
| CN-105990428-A | Semiconductor device, fabrication method thereof and electronic apparatus | 中芯国际集成电路制造(上海)有限公司 | 2016-10-05 | — | — | CN | claimed |
| CN-103137657-B | Semiconductor integrated device and forming method thereof | 中芯国际集成电路制造(上海)有限公司 | 2016-08-31 | — | — | CN | claimed |
| CN-103311110-B | The forming method of semiconductor structure, the forming method of transistor | 中芯国际集成电路制造(上海)有限公司 | 2016-08-31 | — | — | CN | claimed |
| CN-103545183-B | Cmos device and preparation method thereof | 中芯国际集成电路制造(上海)有限公司 | 2016-06-29 | — | — | CN | claimed |
| CN-103632976-B | The forming method of transistor | 中芯国际集成电路制造(上海)有限公司 | 2016-06-29 | — | — | CN | claimed |
| CN-103426742-B | The forming method of semiconductor structure and transistor | 中芯国际集成电路制造(上海)有限公司 | 2016-06-29 | — | — | CN | claimed |
| US-9190282-B2 | High-K dielectric layer based semiconductor structures and fabrication process thereof | SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORP. (CN) | 2015-11-17 | — | — | US | claimed |
| US-20130313658-A1 | HIGH-K DIELECTRIC LAYER BASED SEMICONDUCTOR STRUCTURES AND FABRICATION PROCESS THEREOF | SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORP. | 2013-11-28 | — | — | US | claimed |
| CN-1826144-A | Device for purifying exhaust gas containing harmful substances | SCHROEDER WERNER (DE) | 2006-08-30 | — | — | CN | claimed |
| US-12598860-B2 | Light-emitting device | SHARP KABUSHIKI KAISHA (JP) | 2026-04-07 | — | — | US | disclosed |
| US-12550600-B2 | Method for producing light-emitting element, and light-emitting element | SHARP KABUSHIKI KAISHA (JP) | 2026-02-10 | — | — | US | disclosed |
| US-6333529-B1 | Capacitor with noble metal electrode containing oxygen | FUJITSU LIMITED (JP) | 2001-12-25 | — | — | US | disclosed |
| US-6048668-A | Method for patterning film and method for exposing resist film | FUJITSU LIMITED (JP) | 2000-04-11 | — | — | US | disclosed |
| CN-1230015-A | Semiconductor device manufacturing apparatus and semiconductor device manufacturing method | NEC CORP (JP) | 1999-09-29 | — | — | CN | disclosed |