SCHEMBL3480009

SCHEMBL3480009

CS(=O)(=O)Oc1cccc(O)c1O

nearest known ligand 0.54

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 3/20 0.54
LMNA P02545 2/20 0.54
HPGD P15428 2/20 0.54
ALOX15 P16050 2/20 0.54
HSD17B10 Q99714 2/20 0.54
TP53 P04637 2/20 0.54
KDM4E B2RXH2 1/20 0.54
CYP3A4 P08684 1/20 0.54
MAPT P10636 1/20 0.54
ALOX12 P18054 1/20 0.54
MAPK1 P28482 1/20 0.54
CA1 P00915 4/20 0.44
CA2 P00918 3/20 0.44
EGFR P00533 2/20 0.44
ADAMTS4 O75173 1/20 0.44
FYN P06241 1/20 0.44
MMP2 P08253 1/20 0.44
MMP9 P14780 1/20 0.44
MMP8 P22894 1/20 0.44
CA6 P23280 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4255151 0.89 ALDH1A1 (0.44) ALDH1A1LMNAHPGDALOX15HSD17B10
SCHEMBL2001002 0.85 HSD11B1 (0.53) ALDH1A1LMNAHPGDALOX15HSD17B10
SCHEMBL5702524 0.84 HSD17B10 (0.41) ALDH1A1LMNAHPGDALOX15HSD17B10
SCHEMBL28030773 0.84 KMT2A (0.44) ALDH1A1LMNAHPGDALOX15HSD17B10
SCHEMBL28814954 0.83 HSD11B1 (0.51) ALDH1A1LMNAHPGDALOX15HSD17B10
SCHEMBL31683755 0.83 HSD11B1 (0.56) ALDH1A1LMNAHPGDALOX15HSD17B10
SCHEMBL1879537 0.81 LMNA (0.50) ALDH1A1LMNAHPGDALOX15HSD17B10
SCHEMBL28833567 0.80 ALDH1A1 (0.50) ALDH1A1LMNAHPGDALOX15HSD17B10
SCHEMBL1056663 0.78 CA1 (0.42) ALDH1A1LMNAHPGDALOX15HSD17B10
SCHEMBL10334392 0.77 TP53 (0.52) ALDH1A1LMNAHPGDALOX15HSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 88 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11970557-B2 Polymer containing photoacid generator LG CHEM, LTD. (KR) 2024-04-30 US disclosed
US-11681227-B2 Enhanced EUV photoresist materials, formulations and processes IRRESISTIBLE MATERIALS LTD (GB) 2023-06-20 US disclosed
CN-107561863-B Positive photosensitive resin composition and application thereof 奇美实业股份有限公司 2022-09-16 CN disclosed
CN-111699206-B Polymers comprising photoacid generators 株式会社LG化学 2022-05-10 CN disclosed
CN-113994256-A Method for forming EUV patterned resist 亚历克斯·P·G·罗宾逊 2022-01-28 CN disclosed
CN-107207456-B Latent acids and their use 巴斯夫欧洲公司 2021-05-04 CN disclosed
US-20210102021-A1 POLYMER CONTAINING PHOTOACID GENERATOR LG CHEM, LTD. (KR) 2021-04-08 US disclosed
CN-111699206-A Polymers comprising photoacid generators 株式会社LG化学 2020-09-22 CN disclosed
US-20200272050-A1 Enhanced EUV Photoresist Materials, Formulations and Processes IRRESISTIBLE MATERIALS, LTD (GB) 2020-08-27 US disclosed
US-10747113-B2 Method of pattern formation and method of producing polysilane resin precursor TOKYO OHKA KOGYO CO., LTD. (JP) 2020-08-18 US disclosed
US-5874195-A Positive-working photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1999-02-23 US disclosed
US-5856058-A HALATION INHIBITOR WHICH IS AN ESTERIFICATION PRODUCT BETWEEN A SPECIFIED PHENOLIC COMPOUND AND A NAPHTHOQUINONE-1,2-DIAZIDE SULFONIC ACID. TOKYO OHKA KOGYO CO., LTD. (JP) 1999-01-05 US disclosed
EP-0646568-B1 Tertiary butyl 4,4-bis(4'-hydroxyphenyl) pentanoate derivatives and positive resist materials containing the same SHINETSU CHEMICAL CO (JP) 1998-12-23 EP disclosed
US-5770343-A Positive-working photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1998-06-23 US disclosed
EP-0749044-A2 Positive-working photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1996-12-18 EP disclosed
EP-0749046-A1 Positive-working photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1996-12-18 EP disclosed
EP-0646568-A2 Tertiary butyl 4,4-bis(4'-hydroxyphenyl) pentanoate derivatives and positive resist materials containing the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 1995-04-05 EP disclosed
US-5356753-A A polyhydroxystyrene resin having some hydroxyl groups substituted by tert-butoxycarbonyloxy groups; solution blocking agent; an onium salt SHIN-ETSU CHEMICAL CO., LTD. (JP) 1994-10-18 US disclosed
EP-0615163-A1 Onium salts and positive resist materials using the same Shin-Etsu Chemical Co., Ltd. (JP) 1994-09-14 EP disclosed
EP-0542523-A1 Positive resist material SHIN-ETSU CHEMICAL CO., LTD. (JP) 1993-05-19 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-10747113-B2 Method of pattern formation and method of producing polysilane resin precursor RTN4, RER1, CROCC ALDH1A1 2894/4885LMNA 935/4885HPGD 3032/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.