SCHEMBL3481487

SCHEMBL3481487

CCCC(C)(O[SiH3])c1ccccc1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPK1 P28482 1/20 0.40
TAAR1 Q96RJ0 2/20 0.38
ALDH1A1 P00352 2/20 0.38
ALOX15 P16050 1/20 0.38
KCNN4 O15554 1/20 0.36
CYP2C19 P33261 3/20 0.36
SCN1A P35498 3/20 0.36
SCN2A Q99250 3/20 0.36
SCN3A Q9NY46 3/20 0.36
CYP3A4 P08684 3/20 0.36
SIGMAR1 Q99720 2/20 0.36
LMNA P02545 2/20 0.36
CYP1A2 P05177 2/20 0.36
CYP2D6 P10635 2/20 0.36
CYP2C9 P11712 2/20 0.36
TSHR P16473 1/20 0.36
NFKB1 P19838 1/20 0.36
MTOR P42345 1/20 0.36
RAB9A P51151 1/20 0.36
KDM4E B2RXH2 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481672 0.89 MAPK1 (0.38) MAPK1TAAR1ALDH1A1ALOX15KCNN4
SCHEMBL5180283 0.89 MAPK1 (0.38) MAPK1TAAR1ALDH1A1ALOX15KCNN4
SCHEMBL5387344 0.83 MAPK1 (0.43) MAPK1TAAR1ALDH1A1ALOX15KCNN4
SCHEMBL13166557 0.82 MAPK1 (0.41) MAPK1TAAR1ALDH1A1ALOX15KCNN4
SCHEMBL11417714 0.80 MAPK1 (0.40) MAPK1TAAR1ALDH1A1ALOX15KCNN4
SCHEMBL1059924 0.78 TAAR1 (0.46) MAPK1TAAR1ALDH1A1ALOX15KCNN4
SCHEMBL9686002 0.78 MAPK1 (0.41) MAPK1TAAR1ALDH1A1ALOX15KCNN4
SCHEMBL3482436 0.78 KCNN4 (0.38) MAPK1TAAR1ALDH1A1ALOX15KCNN4
SCHEMBL703240 0.78 KCNN4 (0.38) MAPK1TAAR1ALDH1A1ALOX15KCNN4
SCHEMBL3482724 0.77 CYP2C19 (0.40) MAPK1TAAR1ALDH1A1ALOX15KCNN4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed