SCHEMBL3481672

SCHEMBL3481672

CCCCC(C)(O[SiH3])c1ccccc1

nearest known ligand 0.42

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
MAPK1 P28482 1/20 0.38
KIF11 P52732 3/20 0.37
SIGMAR1 Q99720 1/20 0.37
TAAR1 Q96RJ0 1/20 0.35
ALDH1A1 P00352 1/20 0.35
ALOX15 P16050 1/20 0.35
LTA4H P09960 2/20 0.35
ESR1 P03372 1/20 0.35
ESR2 Q92731 1/20 0.35
KCNN4 O15554 1/20 0.34
CNR1 P21554 1/20 0.34
CNR2 P34972 1/20 0.34
GAA P10253 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5180283 0.96 MAPK1 (0.38) MAPK1KIF11SIGMAR1TAAR1ALDH1A1
SCHEMBL3481487 0.89 MAPK1 (0.40) MAPK1SIGMAR1TAAR1ALDH1A1ALOX15
SCHEMBL21681665 0.86 MAPK1 (0.41) MAPK1KIF11SIGMAR1TAAR1ALDH1A1
SCHEMBL28944297 0.85 CNR2 (0.40) MAPK1KIF11SIGMAR1LTA4HCNR1
SCHEMBL1581716 0.81 MAPK1 (0.42) MAPK1SIGMAR1LTA4HESR1CNR1
SCHEMBL1581356 0.81 MAPK1 (0.42) MAPK1SIGMAR1LTA4HESR1CNR1
SCHEMBL5387344 0.80 MAPK1 (0.43) MAPK1SIGMAR1TAAR1ALDH1A1ALOX15
SCHEMBL27998616 0.80 ALDH1A1 (0.47) MAPK1KIF11SIGMAR1ALDH1A1ALOX15
SCHEMBL706928 0.79 KIF11 (0.38) MAPK1KIF11SIGMAR1LTA4HESR1
SCHEMBL3415673 0.79 KIF11 (0.38) MAPK1KIF11SIGMAR1LTA4HESR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed