SCHEMBL3481586

SCHEMBL3481586

CCCCO[SiH](OCCCC)c1ccc(OC)cc1

nearest known ligand 0.42

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
NR1I2 O75469 1/20 0.42
CA1 P00915 2/20 0.42
CA2 P00918 2/20 0.42
CA12 O43570 1/20 0.42
CA7 P43166 1/20 0.42
CA9 Q16790 1/20 0.42
CA14 Q9ULX7 1/20 0.42
HDAC3 O15379 1/20 0.41
HDAC1 Q13547 1/20 0.41
HDAC2 Q92769 1/20 0.41
AHR P35869 1/20 0.40
CALM1 P0DP23 1/20 0.39
LTA4H P09960 1/20 0.39
NR5A1 Q13285 1/20 0.39
POLB P06746 1/20 0.39
KMT2A Q03164 1/20 0.39
TP53 P04637 1/20 0.39
TSHR P16473 1/20 0.39
FAAH O00519 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482288 0.90 NR1I2 (0.48) NR1I2CA1CA2CA12CA7
SCHEMBL705460 0.90 LTA4H (0.41) LTA4HNR5A1TP53TSHR
SCHEMBL705223 0.84 NR5A1 (0.44) LTA4HNR5A1TP53TSHR
SCHEMBL3481702 0.82 MEN1 (0.37) LTA4HNR5A1KMT2ATP53TSHR
SCHEMBL3482081 0.82 CA1 (0.48) NR1I2CA1CA2CA12CA7
SCHEMBL8954023 0.81 CYP1A2 (0.50) LTA4HNR5A1TP53TSHR
SCHEMBL3482301 0.81 ALDH1A1 (0.39) LTA4HNR5A1TSHR
SCHEMBL2769933 0.80 LTA4H (0.47) LTA4HTP53TSHR
SCHEMBL19809134 0.77 NR5A1 (0.56) LTA4HNR5A1KMT2ATP53TSHR
SCHEMBL704584 0.77 ALDH1A1 (0.35) LTA4HNR5A1KMT2ATP53TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed