SCHEMBL705223

SCHEMBL705223

CCCCCO[SiH](OCCCCC)c1ccc([SiH](OCCCCC)OCCCCC)cc1

nearest known ligand 0.44

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
NR5A1 Q13285 1/20 0.44
TSHR P16473 3/20 0.43
TP53 P04637 2/20 0.43
PLA2G4B P0C869 5/20 0.42
LTA4H P09960 2/20 0.41
CYP3A4 P08684 1/20 0.41
MAPK1 P28482 1/20 0.41
ALDH1A1 P00352 1/20 0.40
LMNA P02545 1/20 0.40
RARB P10826 3/20 0.40
PLA2G4A P47712 1/20 0.38
GBA1 P04062 1/20 0.38
NPC1 O15118 1/20 0.37
MAPT P10636 1/20 0.37
RAB9A P51151 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705460 0.93 LTA4H (0.41) NR5A1TSHRTP53PLA2G4BLTA4H
SCHEMBL19809134 0.92 NR5A1 (0.56) NR5A1TSHRTP53LTA4HCYP3A4
SCHEMBL19809207 0.90 LTA4H (0.47) NR5A1TSHRTP53PLA2G4BLTA4H
SCHEMBL1702519 0.88 TSHR (0.47) NR5A1TSHRTP53PLA2G4BLTA4H
SCHEMBL3481702 0.85 MEN1 (0.37) NR5A1TSHRTP53PLA2G4BLTA4H
SCHEMBL3482301 0.84 ALDH1A1 (0.39) NR5A1TSHRPLA2G4BLTA4HMAPK1
SCHEMBL8954023 0.84 CYP1A2 (0.50) NR5A1TSHRTP53LTA4HCYP3A4
SCHEMBL3481586 0.84 NR1I2 (0.42) NR5A1TSHRTP53LTA4H
SCHEMBL704584 0.83 ALDH1A1 (0.35) NR5A1TSHRTP53LTA4HALDH1A1
SCHEMBL2769933 0.83 LTA4H (0.47) TSHRTP53PLA2G4BLTA4HCYP3A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed